Modeling of radiation damage effects in silicon detectors at high fluences HL-LHC with Sentaurus TCAD

Abstract

In this work we propose the application of an enhanced radiation damage model based on the introduction of deep level traps / recombination centers suitable for device level numerical simulation of silicon detectors at very high fluences (e.g. 2.0 × 10 16 1 MeV equivalent neutrons/cm 2 ). We present the comparison between simulation results and experimental data for p-type substrate structures in different operating conditions (temperature and biasing voltages) for fluences up to 2.2 × 10 16 neutrons/cm 2 . The good agreement between simulation findings and experimental measurements fosters the application of this modeling scheme to the optimization of the next silicon detectors to be used at HL-LHC.

Combined Bulk and Surface Radiation Damage Effects at Very High Fluences in Silicon Detectors: Measurements and TCAD Simulations

“…Once assessed the main parameters of the surface damage effects to be included within the TCAD model, a comprehensive TCAD model has been devised by combining the bulk damage model [14] and the surface model previously described. A comprehensive analysis of the variation of the effective doping concentration (Neff), the leakage current density and the charge collection efficiency (CCE) as a function of the fluence has been performed using the Synopsys Sentaurus TCAD device simulator.…”

“…A comprehensive analysis of the variation of the effective doping concentration (Neff), the leakage current density and the charge collection efficiency (CCE) as a function of the fluence has been performed using the Synopsys Sentaurus TCAD device simulator. As a reminder, the bulk trap level parameters used here are designed to model p-type Float Zone substrates after irradiation, and are based on work done by our group in the past [1,14]. The full details of the traps are given in Table III, IV, V. Each defect level is characterized by different parameters: the energy level (eV), the associated defect type, the cross sections for electrons e and holes h (cm -2 ) and the introduction rate  (cm -1 ), respectively.…”

“…The oxide charge density has been considered saturated at NOX=1.810 12 cm -2 . In case of proton irradiation, this saturation value is reached at relatively low fluences of the order of 1×10 14 1-MeV n/cm 2 , the exact value depending on the proton energy [26]. In case of neutrons, the total ionizing dose is due to the gamma-ray background, and oxide charge saturation is reached at fluences of the order of 1x10 16 1-MeV n/cm 2 [27].…”

Development of new 3D pixel sensors for phase 2 upgrades at LHC

“…Nevertheless, remarkab exceeding 50% at 150 V, is obtain pixel. also including surface fF for the 50×50 μm 2 and ainly due to the different e breakdown voltage before the ratio of the signal after was simulated using the 3-fied as described in [10] Besides allowing for high radiation hardness, the small inter-electrode distance also allows to minimize the dead area achievable by using the slim-edge concept introduced with the ATLAS IBL pixels [1,7]. This design is based on an ohmic column fence that confines the depletion region spreading from the outermost junction columns so that it does not reach the highly damaged cut region [11].…”

A new model for the TCAD simulation of the silicon damage by high fluence proton irradiation

“…A TTEMPTS to understand and optimise irradiated silicon sensors using TCAD simulations have been around for quite some time [1]- [5]. The biggest challenge for such device simulations is the implementation of a satisfactory model for radiation damage effects.…”