Modeling of inversion and centroid charges of long channel strained-silicon surrounding gate MOSFETs incorporating quantum effects

Abstract

This paper presents a modeling approach for strained silicon surrounding gate MOSFETs. The main contribution of this work is the simplification of the charge model by using an explicit solution technique which includes the strained and quantum effects. Quantum effects are essential due to extreme scaling of radius and oxide thickness. These can be solved by integrating the quantum capacitance and threshold in the proposed model. The gate capacitance is formulated based on a centroid charge that can be applied for multiple doping levels and structural dimensions. Meanwhile, the quantum effect on the channel due to carrier confinement can be approximated based on the radius of the channel. For the simulator, the Bohm Quantum Model (BQP) is used to facilitate the quantum effect. Our explicit model is in good agreement with the numerical simulator, for various gate voltages, doping concentration and structural effects, based on the centroid and inversion charge. It is found that the doping level can contribute to the changes in the centroid charge position from the silicon-oxide interface to the center of the channel. In addition, the tensile strain shows a significant impact on the electrical properties of the strained silicon surrounding gate such as threshold voltage, inversion charge, and current. This technique holds the potential for implementation is owing to advantages such as fast data computing which can be directly integrated into the circuit simulator.

Analytical modeling and doping optimization for enhanced analog performance in a Ge/Si interfaced nanowire MOSFET

“…This study does not take into account the ballistic transport and quantum mechanical effects (QMEs), which become dominant only when the channel length and thickness are less than 10 nm, respectively [34,44]. When ballistic transport and quantum mechanical effects become significant (channel length<10 nm and channel thickness<10 nm), they can lead to subthreshold conduction, channel length modulation, increased short channel effects, threshold voltage shift, non-equilibrium carrier distribution, and enhanced carrier mobility [45][46][47][48][49]. Table 3 shows the improvement in device characteristics of GSI-NWM by using germanium as a source material.…”

Negative Capacitance Dual-Gated ISFETs as Ultra-Sensitive pH Sensors

“…Additionally, the Bohm quantum correction model was applied to account for quantum confinement at nanoscale dimensions. 48 Current (I D ) and gate charge (Q G ) as a function of the applied gate bias are obtained from the self-consistent solution of Poisson′s equations and current continuity equations. Extracted results are used to model the FE capacitor with the help of the single-domain phenomenological Landau-Khalatnikov (L-K) equation.…”

“…The Shockley–Read–Hall (SRH) and Auger recombination model, Lombardi and field-dependent mobility model, and dopant-dependent bandgap narrowing model were considered in the simulation. Additionally, the Bohm quantum correction model was applied to account for quantum confinement at nanoscale dimensions …”

“…Additionally, the Bohm quantum correction model was applied to account for quantum confinement at nanoscale dimensions. 48 …”