Modeling of InGaN p-n junction solar cells

Feng, Shih‐Wei; Lai, Chien‐Chih; Tsai, Chung‐Ying; Su, Yu-Ru; Tu, Li‐Wei

doi:10.1364/ome.3.001777

Cited by 37 publications

(32 citation statements)

References 22 publications

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“…4 (d) it indicates a weak field site which is consistent with the emission, absorption and lifetime measurements. In a tetrahedral d 2 configuration the 3 A 2 ( 3 F)> 3 T 2 ( 3 F) transition is expected to be significantly weaker than the other two spin-allowed transitions because it is only magnetic dipole allowed [7,45], however this is not evident from the derivative absorption and PLE spectra of V:GLS, this indicates that V:GLS, may not have a tetrahedral d 2 configuration.…”

Section: Octahedral D 3 Configurationmentioning

confidence: 97%

“…Table 2 gives the energy matrix for the 1 E( 1 D, 1 G) state. Diagonalizing the matrix in Table 2 and dividing by B gives: (7) and (8) In Tanabe-Sugano diagrams, the energy term of the lowest energy level, in this case E( 3 A 2 ( 3 F))/B=-12Dq/B-8, is subtracted from the energy terms of all the energy levels, as has been done in Eqs. 9 to 12 for the energy levels of interest i.e.…”

Section: Tetrahedral D 2 Configurationmentioning

confidence: 99%

“…Therefore various transition metal doped glasses have been proposed as gain media for devices that could enable the utilization of bandwidth in the telecommunications window not currently covered by the erbium-doped fiber amplifier (EDFA). To date these studies have mainly focused on Cr-and Ni-doped glasses [6][7][8] with very little work exploring V-doped glasses as active gain media. In previous work we suggested that V-doped GLS (V:GLS) could be a potential gain media covering the telecommunications window, because it displays photoluminescence peaking at 1500 nm with a full width at half maximum (FWHM) of 500 nm [9].…”

Section: Introductionmentioning

confidence: 99%

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Determination of the oxidation state and coordination of a vanadium doped chalcogenide glass

Hughes¹,

Curry²,

Hewak³

2011

Optical Materials

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Vanadium doped chalcogenide glass has potential as an active gain medium, particularly at telecommunications wavelengths. This dopant has three spin allowed absorption transitions at 1100, 737 and 578 nm, and a spin forbidden absorption transition at 1000 nm. X-ray photo electron spectroscopy indicated the presence of vanadium in a range of oxidation states from V + to V 5+ . Excitation of each absorption band resulted in the same characteristic emission spectrum and lifetime, indicating that only one oxidation state is optically active. Arguments based on TanabeSugano analysis indicated that the configuration of the optically active vanadium ion was octahedral V 2+ . The calculated crystal field parameters (Dq/B, B and C/B) were 1.85, 485.1 and 4.55, respectively. IntroductionDetermination of the oxidative state of an active ion dopant is important for optical device applications as it determines the energy levels within the material available for use. Knowledge of the oxidation state is therefore needed when modelling the radiative and non-radiative transitions that occur in an optical material. The oxidation states of transition metal ions are particularly difficult to identify by spectroscopy as their bonding d electrons also determine their electronic energy levels and they are therefore strongly dependent on both the strength and the arrangement (coordination) of the neighbouring atoms electric field. In contrast, rare-earth metals, in which the electronic energy levels are determined by the 4f electrons which do not take part in bonding and are shielded by the 5s5p electrons, the oxidation state can be identified relatively easily by spectroscopy. Amorphous glass hosts, with their tendency to result in mixed oxidation states due to significant variation in the local environment, lead to a complex superposition of electronic states when doped, which exacerbates the problem of spectroscopic analysis of transition metals.Chalcogenide glasses often exhibit low phonon energy and this allows the observation of optical transitions in dopants that are not observed in traditional glasses such as silica. Gallium lanthanum sulphide (GLS) has a transmission window of ~0.5-10 ?m [1], a high refractive index of ~2.4, and a low maximum phonon energy of ~425 cm -1 which results in low non-radiative decay rates [2]. These properties allowed the observation of low-energy transitions which are not seen in other hosts, for example the first observation of the 4.9 ?m fluorescence from the 5 I 4 > 5 I 5 transition of Ho 3+ [3]. Also, rarely observed Ti 3+ emission [4] and long-wavelength emission from Bi [5] have both also been reported from GLS host glasses.

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Section: Octahedral D 3 Configurationmentioning

confidence: 97%

Section: Tetrahedral D 2 Configurationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Determination of the oxidation state and coordination of a vanadium doped chalcogenide glass

Hughes¹,

Curry²,

Hewak³

2011

Optical Materials

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“…Hence, homojunction devices would be essential to achieve higher efficiencies because employing p-i-n structures could eliminate the polarization effects. Homojunction In 0.60 Ga 0.40 N p-n junctions with optimal device designs are predicted to be 21.5% efficiency under AM1.5g conditions (Feng et al 2013). InGaN based p-i-n solar cells with InGaN as the intrinsic layer between GaN and with graded indium composition up to 50% could lead to theoretical efficiency of 18.53% under AM1.5 (Mahala et al 2013).…”

Section: Lattice-mismatched Ingan-on-simentioning

confidence: 99%

III–V Multijunction Solar Cell Integration with Silicon: Present Status, Challenges and Future Outlook

Jain

Hudait

2014

Energy Harvesting and Systems

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Achieving high-efficiency solar cells and at the same time driving down the cell cost has been among the key objectives for photovoltaic researchers to attain a lower levelized cost of energy (LCOE). While the performance of silicon (Si) based solar cells have almost saturated at an efficiency of~25%, III-V compound semiconductor based solar cells have steadily shown performance improvement at~1% (absolute) increase per year, with a recent record efficiency of 44.7%. Integration of such high-efficiency III-V multijunction solar cells on significantly cheaper and large area Si substrate has recently attracted immense interest to address the future LCOE roadmaps by unifying the high-efficiency merits of III-V materials with low-cost and abundance of Si. This review article will discuss the current progress in the development of III-V multijunction solar cell integration onto Si substrate. The current state-of-the-art for III-Von-Si solar cells along with their theoretical performance projections is presented. Next, the key design criteria and the technical challenges associated with the integration of III-V multijunction solar cells on Si are reviewed. Different technological routes for integrating III-V solar cells on Si substrate through heteroepitaxial integration and via mechanical stacking approach are presented. The key merits and technical challenges for all of the till-date available technologies are summarized. Finally, the prospects, opportunities and future outlook toward further advancing the performance of III-V-on-Si multijunction solar cells are discussed. With the plummeting price of Si solar cells accompanied with the tremendous headroom available for improving the III-V solar cell efficiencies, the future prospects for successful integration of III-V solar cell technology onto Si substrate look very promising to unlock an era of next generation of high-efficiency and low-cost photovoltaics.

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“…3 The material has a larger peak electron velocity, larger saturation velocity, higher breakdown voltage, and thermal stability, making it highly suitable for use as a channel material in microwave power devices. 4,5 Applications of InGaN include LEDs, laser diodes, [6][7][8] solar cells, [9][10][11] and photodetectors. Much interest has been focused on InGaN/GaN multi quantum wells (MQWs) because of their utility as the active layer in high-brightness III-nitride LEDs and continuous-wave (CW) blue-green laser diodes (LDs).…”

Section: Introductionmentioning

confidence: 99%

Macroscopic Polarization Effect on Bowing Constant of Thermal Parameters of In x Ga1−x N

Gedam

Pansari

Sahoo

2015

Journal of Elec Materi

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In this work, we have investigated theoretically the effect of macroscopic polarization [sum of spontaneous (SP) and piezoelectric (PZ) polarization] on various physical parameters of In x Ga 1Àx N alloy. The macroscopic polarization contributes to the effective elastic constants of In x Ga 1Àx N alloy. This modifies the phonon group velocity, Debye temperature, and Debye frequency of the alloy. These thermal parameters are estimated as a function of In composition. Our calculation shows that these material parameters are enhanced and vary nonlinearly with In composition, i.e., show bowing. The cause of bowing is the nonlinear dependence of the spontaneous and piezoelectric polarization on composition. The bowing constant of each material parameter (with and without polarization) is also theoretically predicted by the best-fit method. The results show that the polarization mechanism not only enhances the parameters but also contributes significantly to the bowing constant. The macroscopic polarization contributes more than 25% to the bowing constant. The obtained results can be used to predict the effect of the polarization mechanism on the thermoelectric properties of In x Ga 1Àx N alloy.

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Modeling of InGaN p-n junction solar cells

Cited by 37 publications

References 22 publications

Determination of the oxidation state and coordination of a vanadium doped chalcogenide glass

Determination of the oxidation state and coordination of a vanadium doped chalcogenide glass

III–V Multijunction Solar Cell Integration with Silicon: Present Status, Challenges and Future Outlook

Macroscopic Polarization Effect on Bowing Constant of Thermal Parameters of In x Ga1−x N

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