Modeling of Electron-Hole Scattering in Semiconductor Power Device Simulation

Velmre, Enn; Koel, Ants; Masszi, Ferenc

doi:10.1007/978-3-7091-6657-4_107

Cited by 3 publications

(1 citation statement)

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“…The room temperature is assumed to be equal to 300 K. The mobility temperature dependence is assumed to vary as T -2.3 for electrons and T -2.2 for holes. The electron-hole scattering is included on base of results from [5]. The values for bandgap narrowing are taken from [6] and the anisotropy phenomenon of mobility is included as foreseen by MEDICI.…”

Section: Description Of the Modelmentioning

confidence: 99%

Numerical Study of Current Crowding Phenomenon in Complementary 4H-SiC JBS Rectifiers

Rang

Higelin²,

Kurel³

2004

MSF

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A new type of power semiconductor device -the Junction Barrier Schottky (JBS) diodehas been introduced recently [1]. Our earlier investigations (e.g. [2,3]) on current crowding effect at Schottky interfaces due to barrier height differences created an idea to investigate the temperature influence on current crowding phenomenon in complementary JBS diodes. The reason for such investigations results from the structure (cross section) of JBS diode, which has three different regions for the current flow through the device under upper metal contact. The MEDICI software package for numerical simulations has been used [4].The current distribution along the p-and n-4H-SiC structures under different temperatures, epitaxial layer concentrations and barrier heights (work function) conditions have been investigated and the results are presented. The clear differences in current suppressing behavior around the areas, where the arbitrary pn-junction reaches the upper contact of the structures near the edge of Schottky interface can be seen only in some cases. Our simulations show also the weak sides of the pepilayer SiC JBS, where the temperature influence changes the normal behavior of the device and rearranges the current distribution under higher temperature and barrier height values.

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Section: Description Of the Modelmentioning

confidence: 99%