A theoretically accurate mobility model for semiconductor device drift-diffusion simulation

Velmre, Enn; Udal, Andres; Kocsis, T; Masszi, Ferenc

doi:10.1088/0031-8949/1994/t54/064

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2000

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“…The quasi-Fermi potential gradients V¢, and the temperature gradient VT are assumed to be weak and collinear, and the magnetic field to be zero. The referred isothermal transport and mobility model [7] and a relevant computer code constitute the mathematical basis of the present study. Here we will describe only some new extensions needed for the calculation of the thermoelectric coefficients.…”

Section: Basic Theorymentioning

confidence: 99%

Modelling of Charge Carrier Non-Isothermal Transport in Silicon and Silicon Carbide

Velmre¹,

Udal²

2000

Proceedings of the Estonian Academy of Sciences. Engineering

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Extending our previously published model of charge carrier transport and mobility, a procedure for calculation of the semiconductor thermoelectric coefficients is developed. It is shown that the phonon drag strongly influences the Seebeck and Peltier coefficients even at high temperatures, up to 400 K for Si and 600 K for SiC. As a new feature, the presented model gives a possibility to investigate the influence of the electron-hole scattering on thermoelectric coefficients.A strong underestimation of non-isothermal V7-proportional current density terms in most of the semiconductor device simulators is pointed out.

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Section: Basic Theorymentioning

confidence: 99%