Modeling of electron gate current and post-stress drain current of p-type silicon-on-insulator MOSFETs

Sheu, Chorng-Jye; Jang, Sheng‐Lyang

doi:10.1016/s0038-1101(02)00326-x

Cited by 6 publications

(8 citation statements)

References 8 publications

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“…Recently we have developed a non-local gate current model for calculating the electron gate currents in siliconon-insulator pMOSFETs. 8) Now we extend the equations in ref. 8 to describe the electron gate current in buried-channel pMOSFETs.…”

Section: Gate Current Modelmentioning

confidence: 88%

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Compact Hot-Electron Induced Oxide Trapping Charge and Post-Stress Drain Current Modeling for Buried-Channel p-Type Metal–Oxide–Semiconductor Field-Effect-Transistors

Sheu¹

2008

jjap

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In this paper, we present a complete and physics-based drain current model for hot-carrier damaged buried-channel (BC) ptype metal-oxide-semiconductor field-effect-transistors (pMOSFETs) operated in the forward and reverse-biased modes. Experimentally it was found that the post-stress drain current of BC pMOSFETs increases, this is caused by hot-carrierinduced electron trapping in the oxide. Considering the subthreshold operation, we present an complete electron gate current model and calculate the spatial distribution of oxide-trapping-charges by using an oxide trapping mechanism, and then we can model the hot-carrier damaged drain current by substituting the spatial distribution of oxide-trapping-charges into the damaged BC MOSFET drain current model. The damaged channel region due to the fixed oxide charges trapped during hotcarrier injection is treated as a bias and stress-time-dependent resistance. The degraded BC MOSFET drain current model is applicable for circuit simulation and its accuracy has been verified by experimental data.

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Section: Gate Current Modelmentioning

confidence: 88%

“…8) Now we extend the equations in ref. 8 to describe the electron gate current in buried-channel pMOSFETs. The electron gate current for BC pMOSFETs can be written as…”

Section: Gate Current Modelmentioning

confidence: 88%

Compact Hot-Electron Induced Oxide Trapping Charge and Post-Stress Drain Current Modeling for Buried-Channel p-Type Metal–Oxide–Semiconductor Field-Effect-Transistors

Sheu¹

2008

jjap

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“…e saturation effect in the electronic structures is observed for drain current for JEFT and MESFET structures [13] and as well for accumulation-mode (AM) -channel siliconon-insulator (SOI) metal-oxide-semiconductor-�els-effecttransistor (MOSFET) or enhancement-mode (EM) -channel SOI MOSFET [14]. e saturation effect in the case of electronic devices is so important that the models of charge transport developed for structures like SOI -type MOSFET [15] or high electron mobility transistors (HEMTs) based on AlGaN/GaN [16] structures have this effect as an necessary condition of correctness of the model. e sublinear behavior of charge transfer with the tendency to saturation is also observed for organic crystals that is for perylene or deuterated naphtalene [17].…”

Section: Temporal Behavior Of Delayed Fluorescence Aer Spatially Permentioning

confidence: 99%

The Kinetics of Joined Action of Triplet-Triplet Annihilation and First-Order Decay of Molecules in T₁State in the Case of Nondominant First-Order Process: The Kinetic Model in the Case of Spatially Periodic Excitation

Borowicz

Nickel

2013

Journal of Spectroscopy

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In this paper the model developed for estimation of the diffusion coefficient of the molecules in the triplet state is presented. The model is based on the intuitive modification of the Smoluchowski equation for the time-dependent rate parameter. Since the sample is irradiated with the spatially periodic pattern nonexponential effects can be expected in the areas of the constructive interference of the exciting laser beams. This nonexponential effects introduce changes in the observed kinetics of the diffusion-controlled triplet-triplet annihilation. Due to irradiation with so-called long excitation pulse these non-exponential effects are very weak, so they can be described with introducing very simple correction to the kinetic model described in the first paper of this series. The values of diffusion coefficient of anthracene are used to calculate the annihilation radius from the data for spatially homogeneous excitation.

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“…Recently, we developed a model of nonlocal gate current for calculating the electron gate current in silicon-on-insulator (SOI) pMOSFETs. 9) We now extend the above equation to describe the electron gate current in BC pMOSFETs. The holes in the channel are accelerated by the channel electric field to initiate the generation of electron-hole pairs, and the hot hole loses its kinetic energy during the impact ionization process and flows to the drain.…”

Section: Gate Current Modelmentioning

confidence: 99%

“…Having been combined with DAHCI, a novel lucky electron gate current model, modified from the conventional lucky electron model to include Fowler-Nordheim tunneling (FNT) and direct tunneling (DT) gate current components, is created for SD BC pMOSFETs, in conjunction with our previous works. 8,9) The local and nonlocal channel electron temperatures, and channel electric field can be analytically calculated. This work forms a pseudo-two-dimensional, nonlocal, and time-efficient electron substrate and gate current model, and provides physical insights into the electron substrate and gate currents.…”

Section: Introductionmentioning

confidence: 99%

Electron Substrate and Gate Current Modeling for Single-Drain Buried-Channel p-Type Metal–Oxide–Semiconductor Field-Effect Transistors Including Tunneling Mechanisms

Sheu¹

2008

jjap

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A model of nonlocal electron substrate and gate currents is presented for single-drain (SD) buried-channel (BC) p-type metaloxide-semiconductor field-effect transistors (pMOSFETs). A nonlocal impact ionization coefficient with characteristic length dependence both in the exponential term and the pre-exponential factor is used in the electron substrate current model. The gate current model is developed by originating a modified lucky electron concept that includes quantum-mechanical tunneling effects in parallel. The channel electric field is first calculated by using an analytical pseudo-two-dimensional MOSFET model, and the spatial distribution of electron temperature along the channel is then derived using a simplified energy balance equation. Having calculated the nonlocal impact ionization coefficient and electron temperature, and modified the lucky electron concept, the nonlocal electron substrate and gate currents can be derived. This model is a time-saving computeraided-design (CAD) model and is physics transparent for SD BC pMOSFETs.

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Modeling of electron gate current and post-stress drain current of p-type silicon-on-insulator MOSFETs

Cited by 6 publications

References 8 publications

Compact Hot-Electron Induced Oxide Trapping Charge and Post-Stress Drain Current Modeling for Buried-Channel p-Type Metal–Oxide–Semiconductor Field-Effect-Transistors

Compact Hot-Electron Induced Oxide Trapping Charge and Post-Stress Drain Current Modeling for Buried-Channel p-Type Metal–Oxide–Semiconductor Field-Effect-Transistors

The Kinetics of Joined Action of Triplet-Triplet Annihilation and First-Order Decay of Molecules in T₁State in the Case of Nondominant First-Order Process: The Kinetic Model in the Case of Spatially Periodic Excitation

Electron Substrate and Gate Current Modeling for Single-Drain Buried-Channel p-Type Metal–Oxide–Semiconductor Field-Effect Transistors Including Tunneling Mechanisms

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Modeling of electron gate current and post-stress drain current of p-type silicon-on-insulator MOSFETs

Cited by 6 publications

References 8 publications

Compact Hot-Electron Induced Oxide Trapping Charge and Post-Stress Drain Current Modeling for Buried-Channel p-Type Metal–Oxide–Semiconductor Field-Effect-Transistors

Compact Hot-Electron Induced Oxide Trapping Charge and Post-Stress Drain Current Modeling for Buried-Channel p-Type Metal–Oxide–Semiconductor Field-Effect-Transistors

The Kinetics of Joined Action of Triplet-Triplet Annihilation and First-Order Decay of Molecules in T1State in the Case of Nondominant First-Order Process: The Kinetic Model in the Case of Spatially Periodic Excitation

Electron Substrate and Gate Current Modeling for Single-Drain Buried-Channel p-Type Metal–Oxide–Semiconductor Field-Effect Transistors Including Tunneling Mechanisms

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The Kinetics of Joined Action of Triplet-Triplet Annihilation and First-Order Decay of Molecules in T₁State in the Case of Nondominant First-Order Process: The Kinetic Model in the Case of Spatially Periodic Excitation