Abstract:In this paper, we present a complete and physics-based drain current model for hot-carrier damaged buried-channel (BC) ptype metal-oxide-semiconductor field-effect-transistors (pMOSFETs) operated in the forward and reverse-biased modes. Experimentally it was found that the post-stress drain current of BC pMOSFETs increases, this is caused by hot-carrierinduced electron trapping in the oxide. Considering the subthreshold operation, we present an complete electron gate current model and calculate the spatial dis… Show more
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