Modeling of dark characteristics of mercury cadmium telluride n+–p junctions

Gopal, Vishnu; Gupta, Shrish C.; Bhan, R. K.; Pal, R.; Chaudhary, P. K.; Kumar, Vikram

doi:10.1016/s1350-4495(02)00185-8

Cited by 41 publications

(26 citation statements)

References 14 publications

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“…The voltage dependences of SCR differential resistance are different for MIS structures with and without graded-band-gap layers. Those with 3,5,7) and capacitance ( 2,4,6,8) of MIS structure versus semiconductor near-surface layer resistance at 200 kHz, for dielectric capacitance 600 pF, bulk resistance 0 (1-4) and 210 Ω ( 5-8), semiconductor near-surface layer capacitance 1000 (1, 2, 5, 6) and 5000 pF (3,4,7,8).…”

Section: Formulas For Calculating Semiconductor Equivalent-circuit Comentioning

confidence: 99%

“…The conductance of MIS structures in strong inversion provides information on the differential resistance of space-charge region (SCR) which determines the rate of recombination of minority carriers in the SCR. The product of the SCR differential resistance and the area (R SCR A d ) is the most important characteristic of MIS photodiodes [4,5] as well as photodiodes where the p-n transition is generated by doping [6,7]. Thus, in [4], for bulk HgCdTe of composition 0.22 the maximum value of those cited in literature R SCR A d = 120 Ω⋅cm 2 at 77 K is listed, whereas in [8], for epitaxial HgCdTe with composition 0.223 without a near-surface graded-band-gap layer, the values…”

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confidence: 99%

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Investigation into MIS structures based on gradedband-gap hetero-epitaxial HgCdTe grown by molecular-beam epitaxy using photo-emf and conductivity methods

2009

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621.315The effect of graded-band-gap layers on the differential resistance of space-charge region in MIS structures based on MBE HgCdTe (x = 0.225) is examined. It is shown that the effect of resistance of the epitaxial-film bulk on the measured capacitance and resistance should be taken into account for correct determination of space-charge region parameters. The presence of near-surface layers with increased Cd contents results in an increase in the resistance of the space-charge region in strong inversion. The product of semiconductor resistance by area as high as 15 Ω⋅cm 2 is obtained despite suppression of tunnel generation-recombination through deep levels in MIS structures with graded-band-gap layers. This might be due to background photogeneration and diffusion of minority charge carriers. The mechanisms for limitation of the differential resistance of space-charge region at different temperatures are discussed for n-HgCdTe (x = 0.225 and 0.292) and p-HgCdTe (x = 0.225). IN RODUCTIONMolecular-beam epitaxy (MBE) of Hg 1-x Cd x Te allows growing hetero-epitaxial structures with the specified indepth distribution of composition, which in turn makes it possible to further optimize the characteristics of infrared detectors. Near-surface layers with enhanced content of Cd decrease the effect of surface recombination on the chargecarrier lifetime in the epitaxial film bulk [1]. Examination of electrical characteristics of MIS structures based on graded-band-gap MBE HgCdTe is necessary for evaluation of the quality of passivating coatings as well as for development of monolithic IR detector arrays. The conventional methods for studying electrical characteristics of MIS structures are designed for semiconductors uniform in depth and cannot be applied to characterization of MIS structures based on graded-band-gap semiconductors in the same form. When examining the properties of MIS structures based on graded-band-gap MBE HgCdTe, one should take into account the resistance of epitaxial film bulk [2] and near-surface graded-band-gap layers [3]. The conductance of MIS structures in strong inversion provides information on the differential resistance of space-charge region (SCR) which determines the rate of recombination of minority carriers in the SCR. The product of the SCR differential resistance and the area (R SCR A d ) is the most important characteristic of MIS photodiodes [4,5] as well as photodiodes where the p-n transition is generated by doping [6,7]. Thus, in [4], for bulk HgCdTe of composition 0.22 the maximum value of those cited in literature R SCR A d = 120 Ω⋅cm 2 at 77 K is listed, whereas in [8], for epitaxial HgCdTe with composition 0.223 without a near-surface graded-band-gap layer, the values

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Section: Formulas For Calculating Semiconductor Equivalent-circuit Comentioning

confidence: 99%

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confidence: 99%

Investigation into MIS structures based on gradedband-gap hetero-epitaxial HgCdTe grown by molecular-beam epitaxy using photo-emf and conductivity methods

2009

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“…The other current components [11] are generation-recombination current in the depletion region, band-to-band tunnelling current, trap assisted tunnelling current and an ohmic component due to dislocations and surface leakage currents. The individual current components can be isolated from an analysis of the measured current-voltage characteristics [12,13] or a study of the temperature dependence of dark current and dynamic impedance of the diode [14,15].…”

Section: /F Noise Modelmentioning

confidence: 99%

Contribution of dislocations to 1/f noise in mercury cadmium telluride infrared photovoltaic detectors

Gopal

Gupta

2006

Infrared Physics & Technology

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“…[1][2][3][4][5] The performance of these systems is largely limited by the magnitude of the photodiode dark current, which is found to be sensitive to the fabrication process. 6,7 However, the fabrication processes of HgCdTe-based devices are far less mature than those for Si-based devices.…”

Section: Introductionmentioning

confidence: 99%

Accurate Simulation of Temperature-Dependent Dark Current in HgCdTe Infrared Detectors Assisted by Analytical Modeling

Chen

et al. 2010

Journal of Elec Materi

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Resistance-voltage curves of n + -on-p Hg 1Àx Cd x Te infrared photodiodes were measured in the temperature range of 60 K to 120 K. Characteristics obtained experimentally were fitted by an improved simultaneous-mode nonlinear fitting process. Based on the extracted parameters, an efficient numerical simulation approach has been developed by inserting trap-assisted and band-toband tunneling models into continuity equations as generation-recombination processes. Simulated dark-current characteristics were found to be in good agreement with the experimental data, demonstrating the validity of the nonlinear fitting process. Our work presents an efficient method for darkcurrent simulations over a wide range of temperatures and bias voltages, which is important for investigating mechanisms of carrier transport across the HgCdTe junction.

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Modeling of dark characteristics of mercury cadmium telluride n+–p junctions

Cited by 41 publications

References 14 publications

Investigation into MIS structures based on gradedband-gap hetero-epitaxial HgCdTe grown by molecular-beam epitaxy using photo-emf and conductivity methods

Investigation into MIS structures based on gradedband-gap hetero-epitaxial HgCdTe grown by molecular-beam epitaxy using photo-emf and conductivity methods

Contribution of dislocations to 1/f noise in mercury cadmium telluride infrared photovoltaic detectors

Accurate Simulation of Temperature-Dependent Dark Current in HgCdTe Infrared Detectors Assisted by Analytical Modeling

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