Accurate Simulation of Temperature-Dependent Dark Current in HgCdTe Infrared Detectors Assisted by Analytical Modeling

Abstract

Resistance-voltage curves of n + -on-p Hg 1Àx Cd x Te infrared photodiodes were measured in the temperature range of 60 K to 120 K. Characteristics obtained experimentally were fitted by an improved simultaneous-mode nonlinear fitting process. Based on the extracted parameters, an efficient numerical simulation approach has been developed by inserting trap-assisted and band-toband tunneling models into continuity equations as generation-recombination processes. Simulated dark-current characteristics were found to be in good agreement with the experimental data, demonstrating the validity of the nonlinear fitting process. Our work presents an efficient method for darkcurrent simulations over a wide range of temperatures and bias voltages, which is important for investigating mechanisms of carrier transport across the HgCdTe junction.

Joint FDTD-Optical/FEM-Electrical Numerical Simulation of Reflection-Type Subwavelength-Microstructure InSb Infrared Focal-Plane Arrays

“…The electron and hole current densities can be expressed as a sum of diffusion and drift components: 13,14 J n ! ¼ ql n n E n !…”

Optimization of Microlenses for InSb Infrared Focal-Plane Arrays

“…For plain drift-diffusion simulation, the well-known Poisson and continuity equations are self-coupled. 4,5 The carrier generation-recombination process consists of Shockley-Read-Hall (SRH), Auger, and optical generation-recombination terms. Additionally, the tunneling effect, such as indicated in the band-to-band model, is implemented in the continuity equations as additional generation-recombination processes.…”

Modeling and simulation of HgCdTe based p+–n–n+ LWIR photodetector

“…The interfacial surface recombination due to non-ideal passivation conditions has also been considered in present model. The magnitude of total dark current of the photodetector is [13][14][15][16] …”

“…22 Te/p + -Hg 0.78 Cd 0. 22 Te/ CdZnTe structure is modeled analytically for LWIR applications in [8][9][10][11][12][13][14] lm wavelength region. The numerical simulation involves nonlinear iterative method for the solution of coupled carrier transport equations that estimate the dependence of the photodetector parameters on the position of the p + -n homojunction barrier.…”