Modeling of charging effect and its correction by EB mask writer EBM-6000

Nakayamada, Noriaki; Wake, Seiji; Kamikubo, Takashi; Sunaoshi, Hitoshi; Tamamushi, Shuichi

doi:10.1117/12.793020

Cited by 13 publications

(6 citation statements)

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“…Also actual products with various pattern densities will be more challenging. It will need charging effect corrections (18) (19) , compensation with feedback to mask from metrology/inspection (20) (21) and further investigations to resolve those issues..…”

Section: Discussionmentioning

confidence: 99%

Electron beam mask writer EBM-7000 for hp 32nm generation

Kamikubo¹,

Ohtoshi²,

Nakayamada³

et al. 2009

SPIE Proceedings

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Optical lithography is facing resolution limit. To overcome this issue, highly complicated patterns with high data volume are being adopted for optical mask fabrications. With this background, new electron beam mask writing system, EBM-7000 is developed to satisfy requirements of hp 32nm generation. Electron optical system with low aberrations is developed to resolve finer patterns like 30nm L/S. In addition, high current density of 200 A/cm 2 is realized to avoid writing time increase. In data path, distributed processing system is newly built to handle large amounts of data efficiently. The data processing speed of 500MB/s, fast enough to process all the necessary data within exposure time in parallel for hp32nm generation, is achieved. And this also makes it possible to handle such large volume dense data as 2G shots/mm 2 local pattern density.In this paper, system configuration of EBM-7000 with accuracy data obtained are presented.

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Section: Discussionmentioning

confidence: 99%

Electron beam mask writer EBM-7000 for hp 32nm generation

Kamikubo¹,

Ohtoshi²,

Nakayamada³

et al. 2009

SPIE Proceedings

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“…There are two major solutions to address the charging effect: using mask blanks with a charge dissipation layer (CDL) that has conductivity to relieve the surface charge 44) [Fig. 15(a)], and using a charging effect correction (CEC) system [45][46][47][48][49][50] [Fig. 15(b)].…”

Section: Charging Effect Reduction Systemmentioning

confidence: 99%

Recent progress and future of electron multi-beam mask writer

Yasuda¹,

Nomura²,

Matsumoto³

et al. 2023

Jpn. J. Appl. Phys.

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In this paper, development of NuFlare Technology’s multi-beam (MB) mask writing system MBM-2000 series is reviewed, and future plans for the MBM series are discussed. The MB mask writing systems were designed on the basis of unique concepts suitable for high-volume production of leading-edge masks, i.e., high beam current density, a reliable beam blanking aperture array (BAA) system with a 50-keV single-stage acceleration optics, high-speed inline pixel-level dose correction, and a distinctive hardware system for charging effect reduction. The latest MB mask writing system, MBM-2000PLUS, achieves a high throughput of 8.7 hours in a 104×130 mm2 writing area for a 150 μC/cm2 resist thanks to a high beam current density of 3.2 A/cm2. In addition, a global position accuracy of 1.2 nm, a local position accuracy of 0.5 nm, and a local critical dimension uniformity of 0.61 nm are achieved. The BAA system has shown long-term stable operation for more than one year. The high productivity and writing accuracy realized by NuFlare Technology’s concepts will contribute to further miniaturization of semiconductors.

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“…Generally, the amount of charge varies in a layout non-linearly with the beam exposure dose depending on the local pattern densities in consequence of proximity effect correction (PEC). IP error variations caused by change in those charge made it difficult to perform modeling in CEC system [26]. In order to enhance robustness of CEC model, we have developed the new electron optics CER2.0 for the MBM TM -2000PLUS.…”

Section: Cer20mentioning

confidence: 99%

Current performance and future plans on electron multi-beam mask writers toward high-NA EUV era

Matsumoto¹,

Nomura²,

Kimura³

et al. 2023

Novel Patterning Technologies 2023

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Electron multi-beam mask writers play a key role to expand EUV lithography usage in device mass production. It was in May 2021 when the MBMTM-2000 was released by NuFlare Technology, Inc. Since then, it has been installed at sites of mask manufactures. Accordingly, it supports their mask development and production. On top of reliable inherited mask writing technologies, newly developed technologies, which have achieved objectives, enable the multi-beam writer to make many contributions. In June 2022, the MBMTM-2000PLUS for the 2 nm node device development eventually debuted. The increased beam current density, 3.2 A/cm2 allows this latest mask writer to print a mask with productive writing time even using lower sensitivity resists. A charge effect reduction (CER) is a hardware solution to reduce amount of the resist surface charge. Thanks to adapting CER2.0, which is upgrade version of CER1.0, the image placement error caused by the resist surface charge effect in the MBMTM-2000PLUS is reduced by 50% as compared with the MBMTM-2000 with optics CER1.0. This successor also takes over essential functions including pixel level dose correction (PLDC), charge effect correction (CEC), and glass thermal expansion correction (GTEC) from the MBM-2000. In this paper, the current performance of MBM series mask writers and the key architectures above-mentioned have been discussed. We also explain our strategies to keep continuous throughput improvement by optimizing items such as beam size, data transfer speed, beam current density and so on. Our roadmap indicates that NuFlare Technology, Inc. makes contribution to the high-NA EUV ecosystem.

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Modeling of charging effect and its correction by EB mask writer EBM-6000

Cited by 13 publications

References 0 publications

Electron beam mask writer EBM-7000 for hp 32nm generation

Electron beam mask writer EBM-7000 for hp 32nm generation

Recent progress and future of electron multi-beam mask writer

Current performance and future plans on electron multi-beam mask writers toward high-NA EUV era

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