Modeling of arsenic activation in HgCdTe

Berding, M. A.; Sher, A.; Schilfgaarde, Mark van; Chen, A. C.; Arias, J. M.

doi:10.1007/s11664-998-0023-5

Cited by 50 publications

(29 citation statements)

References 14 publications

(12 reference statements)

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“…We recently proposed a mechanism for transfer of the arsenic from the cation to anion sublattice ͑the essential step in the activation process͒. 10 The starting defect for the transfer is the arsenic on a cation site bound to a mercury vacancy, As Hg -V Hg , with a tellurium on the intervening anion sublattice, Te Te . From Fig.…”

Section: Isolated Native Point Defectsmentioning

confidence: 99%

Amphoteric behavior of arsenic in HgCdTe

Berding

Sher

1999

Applied Physics Letters

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The properties of arsenic in HgCdTe are predicted using ab initio calculations and a statistical theory. Predictions on the amphoteric nature of arsenic are in good agreement with experimental results on material growth both by liquid phase epitaxy and molecular beam epitaxy (MBE). The experimentally observed dependence of the arsenic diffusion on mercury partial pressure is also explained by our results. A microscopic model for activating the arsenic as an acceptor is suggested, and requirements of post-MBE-growth activation anneals are identified.

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Section: Isolated Native Point Defectsmentioning

confidence: 99%

Amphoteric behavior of arsenic in HgCdTe

Berding

Sher

1999

Applied Physics Letters

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“…Since the report by O. Wu et al 5 of successful incorporation of As by using Cd 3 As 2 , extrinsically p-type doping by As has remained an important topic for achieving multicolor or high-performance FPAs as it has been obstructed by complications derived from the amphoteric behavior of As for a Te-rich growth mode 6 and the low growth temperature at which As may form some defect complexes. 7 In an attempt to respond to these technical challenges, a study combining theoretical and experimental efforts devoted to understanding the fundamental mechanisms and to improving the material quality of MBE-grown HgCdTe on alternative substrates of GaAs and Si has been carried out at the Shanghai Institute of Technical Physics, and some of the results are presented in this article.…”

Section: Introductionmentioning

confidence: 99%

MBE HgCdTe on Alternative Substrates for FPA Applications

Quan

et al. 2008

Journal of Elec Materi

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Results of first-principles calculations and experiments focusing on molecular beam epitaxy (MBE) growth of HgCdTe on the alternative substrates of GaAs and Si are described. The As passivation on (2 · 1) reconstructed (211) Si and its effects on the surface polarity of ZnTe or CdTe were clarified by examining the bonding configurations of As. The quality of HgCdTe grown on Si was confirmed to be similar to that grown on GaAs. Typical surface defects in HgCdTe and CdTe were classified. Good results for uniformities of full width at half maximum (FWHM) values of x-ray rocking curves, surface defects, and x values of Hg 1-x Cd x Te were obtained by refining the demanding parameters and possible tradeoffs. The sticking coefficient of As 4 for MBE HgCdTe was determined. The effects of Hg-assisted annealing for As activation were investigated experimentally and theoretically by examining the difference of the formation energy of As Hg and As Te . Results of focal-plane arrays (FPAs) fabricated with HgCdTe grown on Si and on GaAs are discussed.

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“…2 Past studies have reported reduced Auger processes in p-doped HgCdTe compared with n-doped HgCdTe due to the difference in Auger 1 and Auger 7 carrier lifetimes. 3,4 Therefore, it is preferred to fabricate devices with the P + /p/N + arrangement. In situ As doping of HgCdTe has been demonstrated by molecular beam epitaxy (MBE) [5][6][7][8] ; however, controllable p-type doping at low concentration with long minority-carrier lifetime has been difficult to achieve.…”

Section: Introductionmentioning

confidence: 99%

Arsenic Diffusion Study in HgCdTe for Low p-Type Doping in Auger-Suppressed Photodiodes

Itsuno

Emelie

Phillips

et al. 2010

Journal of Elec Materi

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Controllable p-type doping at low concentrations is desired for multilayer HgCdTe samples in a P + /p/N + structure due to the promise of suppressing Auger processes, and ultimately reduced dark current for infrared detectors operating at a given temperature. In this study, a series of arsenic implantation and annealing experiments have been conducted to study diffusion at low Hg partial pressure with the goal of achieving effective control over dopant profiles at low concentration. Arsenic dopant profiles were measured by secondary ion mass spectroscopy (SIMS), where diffusion coefficients were extracted with values ranging between 3.35 9 10 À16 cm 2 s À1 and 6 9 10 À14 cm 2 s À1 . Arsenic diffusion coefficients were found to vary strongly with Hg partial pressure and HgCdTe alloy composition, corresponding to variations in Hg vacancy concentration.

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Modeling of arsenic activation in HgCdTe

Cited by 50 publications

References 14 publications

Amphoteric behavior of arsenic in HgCdTe

Amphoteric behavior of arsenic in HgCdTe

MBE HgCdTe on Alternative Substrates for FPA Applications

Arsenic Diffusion Study in HgCdTe for Low p-Type Doping in Auger-Suppressed Photodiodes

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