Modeling of Ambient‐Meniscus Melt Interactions Associated with Carbon and Oxygen Transport in EFG of Silicon Ribbon

Abstract

Impurity transport processes associated with interaction of reactive ambient gases and meniscus melt during growth of silicon ribbon by the edge-defined film-fed growth (EFG) technique have been investigated with the help of numerical solution of mass and momentum transport equations. The transport of oxygen and carbon is examined in detail. It is shown that oxygen transport from meniscus sources can account for the interstitial oxygen observed to be introduced into ribbon grown with CO2 in the meniscus ambient. Growth speed is the process parameter that has the most pronounced influence on ribbon impurity levels when a source or sink for the impurity is present on the meniscus surface. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.192.114.19 Downloaded on 2015-06-12 to IP

Ambient gas-induced SiC-like structures in edge-defined film-fed grown polycrystalline silicon samples

“…Oxygen formed upon interaction of CO gas with Si melt [6] diffuses into the subsurface layer during crystal growth. It segregates there and facilitates further coprecipitation of carbon and silicon selfinterstitials, as found by Feng et al [21].…”

“…Therefore, additional carbon supplied from the ambient atmosphere will not tend to go into solution if the melt is saturated. Thus formation of SiC may accommodate the carbon brought to the meniscus surface by the gas [6].…”