Modeling HEMT intermodulation distortion characteristics

Qu, Guoli; Parker, Anthony E.

doi:10.1016/s0026-2692(00)00021-5

Cited by 8 publications

(6 citation statements)

References 6 publications

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“…The shift in frequency also impacts the TOI op value. This variation in frequency affects the carrier density of the 2‐DEG and that is slightly higher at low frequency than those at higher frequency 27‐32 . Therefore, at low frequencies, the TOI op is higher at 53 MHz than at 3.6 and 7 GHz.…”

Section: Results and Analysismentioning

confidence: 96%

“…This variation in frequency affects the carrier density of the 2-DEG and that is slightly higher at low frequency than those at higher frequency. [27][28][29][30][31][32] Therefore, at low frequencies, the TOI op is higher at 53 MHz than at 3.6 and 7 GHz. It actually reduces distortion and nonlinearity in microwave devices.…”

Section: Toi and Ndl Over Multi-bias And Frequencymentioning

confidence: 94%

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Experimental insight into the third‐order intercepts and nonlinear distortion of GaN HEMTs

Alim

Ali

Gaquière

2020

Int J RF Microw Comput Aided Eng

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This research is about investigating the third-order intercept point (TOI) and nonlinear distortion level (NDL) for two GaN HEMTs of different gate lengths with temperature and frequency. As a multi-biasing, input power, frequency and temperature-dependent term; the TOI point and as well as the nonlinear distortion level are particular figures merit relevant to the third-order intermodulation distortion (IMD 3) product. The primary results are the output

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Section: Results and Analysismentioning

confidence: 96%

Section: Toi and Ndl Over Multi-bias And Frequencymentioning

confidence: 94%

Experimental insight into the third‐order intercepts and nonlinear distortion of GaN HEMTs

Alim

Ali

Gaquière

2020

Int J RF Microw Comput Aided Eng

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“…[25][26][27] where two-tone spectrum is also verified. The geometry dependence on IMD characteristics of MOSFETs is investigated as the bias is fixed at two points in the breakdown and saturation regions.…”

Section: Resultsmentioning

confidence: 99%

Investigation of geometry dependence on MOSFET linearity in the impact ionization region using Volterra series

Lee

Lin

2015

Microelectronics Reliability

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“…Study the intermodulation distortion behavior as GaN HEMT as it is an outstanding candidate of high power, high frequency and high temperature operation are extremely advantageous for communication systems. Several nonlinear sources of microwave components are identified straightforwardly [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17] as biasing, voltage gain, frequency, dissimilarity in sample variation, gate dimensions, internal capacitance, transconductance and output conductance along with their derivatives and cross terms using two-tone technique. Furthermore, it was identified that the magnitude of output conductance, g ds and its derivatives (g ds2 , g ds3 ) were remarkably small against transconductance, g m and its derivatives (g m2 , g m3 ) [18,19].…”

Section: Introductionsmentioning

confidence: 99%

On the correlation between intermodulation distortion and RF transconductance for microwave GaN HEMT

Ali¹,

Alim²,

Rezazadeh³

et al. 2019

Semicond. Sci. Technol.

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This paper investigates the correlation between intermodulation distortion and RF transconductance in AlGaN/GaN high electron mobility transistor (HEMT) grown on SiC Substrate. Two-tone intermodulation distortion measurements were carried out across a comprehensive biasing range changing the frequency and ambient temperature and input power to point out this correlation. The main contribution is that, the correlation between intermodulation distortion and the behavior of transconductance and its derivatives (G m , G m2 , and G m3 ) is investigated and summarized. It is demonstrated that the nonlinearity is directly correlated to the RF transconductance behavior where the peak values of the fundamental IMD arise at the peak of G m and the null points in IMD 2 and IMD 3 arises when G m2 and G m3 alters from positive to negative magnitudes. The changes in frequency, input power and temperature affect the threshold voltage V T which in turn impacts on that phenomenon. As the nulls/notches are crucial indicator for identifying minimum distortion level, an empirical model for null's current is develop in correlation with transconductance. Finally, the measured and simulated IMDs as well as the null's current shows very good agreement. In addition, the small-signal measurement and as well as the de-embedding of the device has been done before the IMD study. The power gain and its derivatives also compared to the transconductance. This analysis is important to know how the intermodulation distortion products behave and to identify a distortion free device at the particular operation point of interest.

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Modeling HEMT intermodulation distortion characteristics

Cited by 8 publications

References 6 publications

Experimental insight into the third‐order intercepts and nonlinear distortion of GaN HEMTs

Experimental insight into the third‐order intercepts and nonlinear distortion of GaN HEMTs

Investigation of geometry dependence on MOSFET linearity in the impact ionization region using Volterra series

On the correlation between intermodulation distortion and RF transconductance for microwave GaN HEMT

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