Modeling Channel Thermal Noise and Induced Gate Noise in Junctionless FETs

Jazaeri, Farzan; Sallèse, Jean-Michel

doi:10.1109/ted.2015.2437954

Cited by 11 publications

(3 citation statements)

References 24 publications

(31 reference statements)

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“…The model is derived without the need to develop a new set of analytical relationships and is found to be valid in all the regions of operation, from deep depletion to flatband and from linear to saturation, as confirmed by extensive comparison with TCAD numerical simulations. In addition, this equivalence should also hold for ac analysis [16], asymmetric operation [17], noise [18], and short channel effects, as developed for JLFETs.…”

Section: Discussionmentioning

confidence: 98%

Charge-based Model for Junction FETs

Jazaeri

Makris

Saeidi

et al. 2018

IEEE Trans. Electron Devices

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We present a unified charge-based model for double-gate and cylindrical architectures of junction fieldeffect transistors (JFETs). The central concept is to consider the JFET as a junctionless FET (JLFET) with an infinitely thin insulating layer, leading to analytical expressions between charge densities, current, and voltages without any fitting parameters. Assessment of the model with numerical technology computer-aided design simulations confirms that holding the JFET as a special case of the JLFET is justified in all the regions of operation, i.e., from deep depletion to flat-band and from linear to saturation. Index Terms-Cylindrical gate all around junction fieldeffect transistor (JFET), double-gate FETs, nanowire FETs, power semiconductor FETs, radiation-hard electronics, vertical JFET (V-JFET).

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Section: Discussionmentioning

confidence: 98%

Charge-based Model for Junction FETs

Jazaeri

Makris

Saeidi

et al. 2018

IEEE Trans. Electron Devices

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“…The equivalent input gate voltage noise is considered as the mathematical construction which is derived from the drain current noise. The relation between S id and S vg can be expressed as [36,37], The same decreases as V GS rises owing to higher transconductance at larger V GS . At moderate frequency of 1 MHz, S vg with traps remains constant, whereas the S vg without trap is first increasing in subthreshold range thereafter it decreases as depicted in figure 7(b).…”

Section: Input Referred Gate Voltage Noise Spectral Density (S Vg )mentioning

confidence: 99%

Noise analysis of NC-GAAFET cylindrical nanowire with non-uniform interface trap charge

Kumar,

Maurya,

Rawat

et al. 2024

Phys. Scr.

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In this article, low to high frequency noise behavior analysis of negative capacitance gate-all-around field effect transistor (NC-GAAFET) MFIS structure Silicon Nanowire (SiNW) device, using Sentauras TCAD simulations, is investigated. The NC-GAAFET SiNW yields on current (ION) 5.31 times larger and off current (IOFF) is significantly reduced by ∼ 105 orders compared to baseline SiNW. The device exhibits an excellent switching ratio of 5.2 × 1014. Average subthreshold swing for the NC-GAAFET is 33 mV/dec compared to 64 mV/dec of baseline nanowire. The Negative-DIBL for the device is −20 mV/V which outshines earlier findings. Furthermore, the drain current noise power spectral density (PSD) Sid, and input referred gate voltage noise PSD (Svg) are comprehensively analyzed in the presence of Gaussian trap (non-uniform) distribution. The analysis indicates that, flicker or (1/f) noise dominates in low frequency regime, generation-recombination (G-R) noise is more influential in mid frequency regime whereas in very high frequency regime diffusion noise is leading. The device exhibits least Sid(NET) and Svg(NET) at tfe = 6 nm compared to baseline, tfe = 5 nm, and 7 nm.

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“…As the gate of the other FET is tied to ground, it acts as a differential-mode input voltage. This noise contribution is related to a noise source of field effect transistors named "induced gate noise" (IGN) 23 . This noise type has been found early and been linked to noise of the drain current, such as shot noise, leading to a modulation of the channel potential, which couples capacitively to the gate 24,25 .…”

Section: Noise Considerationsmentioning

confidence: 99%

Fast low-noise transimpedance amplifier for scanning tunneling microscopy and beyond

Štubian

Bobek

Setvín

et al. 2020

Review of Scientific Instruments

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A transimpedance amplifier has been designed for scanning tunneling microscopy (STM). The amplifier features low noise (limited by the Johnson noise of the 1 GΩ feedback resistor at low input current and low frequencies), sufficient bandwidth for most STM applications (50 kHz at 35 pF input capacitance), a large dynamic range (0.1 pA to 50 nA without range switching) as well as a low input voltage offset. The amplifier is also suited for placing its first stage into the cryostat of a low-temperature STM, minimizing the input capacitance and reducing the Johnson noise of the feedback resistor. The amplifier may also find applications for specimen current imaging and electron-beam induced current measurements in scanning electron microscopy, and as a photodiode amplifier with a large dynamic range. This paper also discusses sources of noise including the often neglected effect of non-balanced input impedance of operational amplifiers, and describes how to accurately measure and adjust the frequency response of low-current transimpedance amplifiers.

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Modeling Channel Thermal Noise and Induced Gate Noise in Junctionless FETs

Cited by 11 publications

References 24 publications

Charge-based Model for Junction FETs

Charge-based Model for Junction FETs

Noise analysis of NC-GAAFET cylindrical nanowire with non-uniform interface trap charge

Fast low-noise transimpedance amplifier for scanning tunneling microscopy and beyond

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