IEEE Trans. Electron Devices

2007

DOI: 10.1109/ted.2006.887048

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Modeling Aspects of Sub-100-nm MOSFETs for ULSI-Device Applications

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“…To obtain 2D potential distribution throughout the device, 2D Poisson's equation used is given as

\frac{\partial^{2} φ (x, y)}{\partial x^{2}} + \frac{\partial^{2} φ (x, y)}{\partial y^{2}} = - \frac{ρ (x, y)}{ε}

where φ ( x , y ) is 2D potential, ε is dielectric permittivity, ρ ( x , y ) is space charge density in different regions and is given as

\begin{matrix} left \\ left ρ (x, y) = & left \begin{array}{l} left & 0, normalfor normalfront normalgate normaloxide \\ left & ρ ((),, x, y), normalfor normalsilicon 0 \leq y \leq \sqrt{{(y_{j} + R_{italicdd})}^{2} - y_{j}^{2}} \\ left & 0, normalfor normalback normalgate normaloxide \end{array} \end{matrix}

…”

Section: Model Formulationmentioning

confidence: 99%

“…To obtain 2D potential distribution throughout the device, 2D Poisson's equation used [13] is given as…”

Section: Model Formulationmentioning

confidence: 99%

See 1 more Smart Citation

Green's function approach for modeling of electrostatic effects in nanoscale fully depleted double‐gate silicon‐on‐insulator metal‐oxide‐semiconductor field‐effect transistors

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2013

Int J Numerical Modelling

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Exact solution of two‐dimensional (2D) Poisson's equation for fully depleted double‐gate silicon‐on‐insulator metal‐oxide‐semiconductor field‐effect transistor is derived using three‐zone Green's function solution technique. Framework consists of consideration of source–drain junction curvature. 2D potential profile obtained forms the basis for estimation of threshold voltage. Temperature dependence of front surface potential distribution, back surface potential distribution and front‐gate threshold voltage are modeled using temperature sensitive parameters. Applying newly developed model, surface potential and threshold voltage sensitivities to gate oxide thickness have been comprehensively investigated. Device simulation is performed using ATLAS 2D (SILVACO, 4701 Patrick Henry Drive, Bldg. Santa Clara, CA 95054 USA) device simulator, and the results obtained are compared with the proposed 2D model. The model results are found to be in good agreement with the simulated data. Copyright © 2013 John Wiley & Sons, Ltd.

“…To obtain 2D potential distribution throughout the device, 2D Poisson's equation used is given as

\frac{\partial^{2} φ (x, y)}{\partial x^{2}} + \frac{\partial^{2} φ (x, y)}{\partial y^{2}} = - \frac{ρ (x, y)}{ε}

where φ ( x , y ) is 2D potential, ε is dielectric permittivity, ρ ( x , y ) is space charge density in different regions and is given as

\begin{matrix} left \\ left ρ (x, y) = & left \begin{array}{l} left & 0, normalfor normalfront normalgate normaloxide \\ left & ρ ((),, x, y), normalfor normalsilicon 0 \leq y \leq \sqrt{{(y_{j} + R_{italicdd})}^{2} - y_{j}^{2}} \\ left & 0, normalfor normalback normalgate normaloxide \end{array} \end{matrix}

…”

Section: Model Formulationmentioning

confidence: 99%

“…To obtain 2D potential distribution throughout the device, 2D Poisson's equation used [13] is given as…”

Section: Model Formulationmentioning

confidence: 99%

Green's function approach for modeling of electrostatic effects in nanoscale fully depleted double‐gate silicon‐on‐insulator metal‐oxide‐semiconductor field‐effect transistors

¹

,

²

,

³

2013

Int J Numerical Modelling

View full text Add to dashboard Cite

Exact solution of two‐dimensional (2D) Poisson's equation for fully depleted double‐gate silicon‐on‐insulator metal‐oxide‐semiconductor field‐effect transistor is derived using three‐zone Green's function solution technique. Framework consists of consideration of source–drain junction curvature. 2D potential profile obtained forms the basis for estimation of threshold voltage. Temperature dependence of front surface potential distribution, back surface potential distribution and front‐gate threshold voltage are modeled using temperature sensitive parameters. Applying newly developed model, surface potential and threshold voltage sensitivities to gate oxide thickness have been comprehensively investigated. Device simulation is performed using ATLAS 2D (SILVACO, 4701 Patrick Henry Drive, Bldg. Santa Clara, CA 95054 USA) device simulator, and the results obtained are compared with the proposed 2D model. The model results are found to be in good agreement with the simulated data. Copyright © 2013 John Wiley & Sons, Ltd.

Three dimensional quantum effects in NanoMOSFETs

³

2008

2008 International Conference on Recent Advances in Microwave Theory and Applications

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