Modeling Approach for the Prediction of Transient and Permanent Degradations of Image Sensors in Complex Radiation Environments

Abstract

International audienceA modeling approach is proposed to predict the transient and permanent degradation of image sensors in complex radiation environments. The example of the OMEGA facility is used throughout the paper. A first Geant4 simulation allows the modeling of the radiation environment (particles, energies, timing) at various locations in the facility. The image sensor degradation is then calculated for this particular environment. The permanent degradation, i.e. dark current increase, is first calculated using an analytical model from the literature. Additional experimental validations of this model are also presented. The transient degradation, i.e. distribution of perturbed pixels, is finally simulated with Geant4 and validated in comparison with experimental data

Radiation-Induced Dose and Single Event Effects in Digital CMOS Image Sensors

“…Therefore, CIS1 seems not to suffer from border effects. From these sets of data and previous studies [18], [24], it can be concluded that the exponential fit method using ke s works with 3T and 4T pixels, using conventional and pinned photodiodes. However, this average value can be reduced in the case of small pixels, where border effects can appear.…”

Dark Current Spectroscopy in Neutron, Proton and Ion Irradiated CMOS Image Sensors: From Point Defects to Clusters

“…As discussed in [2,9], the exponential hot pixel tail is likely to correspond to the dark current PDF of a nuclear interaction and the shift from an exponential to a Gaussian shape is likely to be due to the superimposition of nuclear interactions in the pixels [4,15,16]. Based on these observations, an empirical model of the dark current distribution generated by nuclear interactions was proposed in [2] and further tested in [7,17]. It uses an exponential law to represent the dark current increase PDF at low DDD (less than one nuclear interaction per pixel in average) [2]:…”

Proton Radiation Effects on Dark Signal Distribution of PPD CMOS Image Sensors: Both TID and DDD Effects

“…However, the total ionizing dose (TID) and displacement damage dose (DDD) effects were presented separately. Inguimbert [ 5 ] and Raine et al [ 6 ] have used Greant4 to simulate the proton radiation effects on the dark signal distribution of the CIS, but the TID effects were not considered. Gilard [ 7 ] and Zheng et al [ 8 ] have reported a method to predict the dark signal distribution of the CIS after proton radiation based on the empirical fitting of experiments data.…”