Dark Current Spectroscopy in Neutron, Proton and Ion Irradiated CMOS Image Sensors: From Point Defects to Clusters

Belloir, Jean-Marc; Goiffon, Vincent; Virmontois, Cédric; Paillet, Philippe; Raine, Mélanie; Molina, Romain; Durnez, Clementine; Gilard, O.; Magnan, Pierre

doi:10.1109/tns.2016.2641479

Cited by 23 publications

(18 citation statements)

References 27 publications

(85 reference statements)

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“…Since the NIEL is unknown in the literature, the DDD cannot be estimated neither. However, as a heavy ion (six protons and six neutrons), due to its large cross section as well as its charge and mass, we expect to have a huge DDD resulting from both nuclear and coulombic interactions [15]. Characterizations have been performed one week after irradiation.…”

Section: Methodsmentioning

confidence: 99%

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Radiation-Induced Defects in 8T-CMOS Global Shutter Image Sensor for Space Applications

Roch

Virmontois

Goiffon

et al. 2018

IEEE Trans. Nucl. Sci.

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We propose to identify the displacement damage defects induced by proton and carbon irradiations in a com mercial off-the-shelf pinned photodiode (PPD) 8T-CMOS image sensors (CISs) dedicated to space application operating in global shutter mode. This paper aims to provide a better understanding of defects creation in a specific space image sensor. Therefore, it leads to comparable results to those we could find during the mission. The study focuses on bulk defects located in the PPD depleted region which represents the main dark current contribution in PPD CIS. Four sensors have been irradiated with carbon ions and protons at different energies and fl uencies. Using both the dark current spectroscopy and the random telegraph si gn al (RTS) analysis, we investigate defects behavior for different isochronal a,mealing temperatures. By combi1ùng these results, we make the connection between two complementary phenomena and bring out the prevalence of divacancies-based defects in terin of dark current contribution.

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Section: Methodsmentioning

confidence: 99%

“…Therefore, we can express the activation energy at room temperature as a function of the energy level into the silicon bandgap as [15] E a (T ) = 0.65 + E.…”

Section: A Characterization Before Irradiationmentioning

confidence: 99%

Radiation-Induced Defects in 8T-CMOS Global Shutter Image Sensor for Space Applications

Roch

Virmontois

Goiffon

et al. 2018

IEEE Trans. Nucl. Sci.

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“…The pre-factor A is proportional to T 2 and estimated to be ln(A)≈36 at 300 K in our studied case, from the experimental value of the divacancy given in [7,17,6].The term ! is commonly named the activation energy needed for one electron to go from the valence band to the conduction band.…”

Section: Calculations Detailsmentioning

confidence: 78%

“…the di-vacancy (2V) and the tri-interstitial (3I). Their properties are analyzed and compared with DC and DC-RTS measurements on CMOS Image Sensors (CIS) [6,7] and DLTS [8].…”

Section: Introductionmentioning

confidence: 99%

Simulation of Single-Particle Displacement Damage in Silicon—Part III: First Principle Characterization of Defect Properties

Jay

Hémeryck

Richard

et al. 2018

IEEE Trans. Nucl. Sci.

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-A first principles study of the defects generated by displacement cascades in silicon is performed. This work is particularly focused on two defect configurations; the di-vacancy and the triinterstitial, both identified in previous Molecular Dynamics (MD) and kinetic Activation Relaxation Technique (k-ART) simulations [1,2]. By combining structural, energy and migration properties evaluated within the framework of the standard Density Functional Theory (DFT) and electronic properties calculated within the G 0 W 0 approximation, a reconstruction of the corresponding thermallyactivated electrical signal generated by each defect is obtained. Their contribution to Dark Current (DC) and Dark Current Random Telegraph Signal (DC-RTS) measured in image sensors is then discussed.

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“…Raine et al [3] have investigated the single DD damage effects on CISs using simulations based on Geant4. Belloir et al [4] have reported the neutron, proton, and heavy ion radiation effects on the dark current spectroscopy of CISs. Wang et al [5][6][7] have presented results on neutron and γ rays radiation effects on CISs.…”

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confidence: 99%

Research on proton radiation effects on CMOS image sensors with experimental and particle transport simulation methods

Xue

Wang

Liu

et al. 2017

Sci. China Inf. Sci.

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Dark Current Spectroscopy in Neutron, Proton and Ion Irradiated CMOS Image Sensors: From Point Defects to Clusters

Abstract: OATAO is an open access repository that collects the work of Toulouse researchers and makes it freely available over the web where possible.

Cited by 23 publications

References 27 publications

Radiation-Induced Defects in 8T-CMOS Global Shutter Image Sensor for Space Applications

Radiation-Induced Defects in 8T-CMOS Global Shutter Image Sensor for Space Applications

Simulation of Single-Particle Displacement Damage in Silicon—Part III: First Principle Characterization of Defect Properties

Research on proton radiation effects on CMOS image sensors with experimental and particle transport simulation methods

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