Modeling and Optimization of Multiground TSVs for Signals Shield in 3-D ICs

Electrical models of through silicon Vias and silicon‐based devices for millimeter‐wave application

“…Therefore, differential TSVs (two TSVs as the signal wires and the others as their return paths) are generally used in high-speed 3D ICs to guarantee signal integrity because of its relatively high noise suppression for common-mode noise and EMI reduction. [13][14][15][16][17][18] The Ground-Signal-Signal-Ground type differential TSVs (GSSG-type D-TSVs) were manufactured and measured successfully in, 13 as shown by Figure 5. The equivalent-circuit model was proposed with frequency up to 20 GHz, and each proposed analytical equation in the model was the function of the structural and material design parameters of TSV, such as the TSV diameter, pitch between TSVs, and TSV oxide thickness, which was scalable.…”

“…Much work has been done to study a scalable structure and a circuit model of this shielding system since its discovery. [15][16][17][18] The structure of differential dielectric-cavity TSV (DDC-TSV) array was put forward in, 15 shown by Figure 6. TSV plugs were placed in the dielectric cavity etched on LRSi.…”

“…The full‐wave extraction method for the RLCG parameters of SDTSVs is proposed with the operating frequency up to 100 GHz, which can be applied to all of differential transmission lines. The shielding structure of a signal TSV surrounded by multiground TSVs were proposed in, which has the advantages of simple fabrication and high flexibility. Therefore, it was an essential way in common use to improve the immunity of high‐speed signals against the noise.…”

“…The through‐silicon vias (TSVs) are short vertical interconnections that carry a variety of signals (power, clock, and data) between different layers within three‐dimensional integrated circuits (3D ICs), which can significantly shorten the interconnect length between circuit blocks and thereby reduces the time delay and power consumption . Correspondingly, the TSV‐based 3D ICs provide opportunities for the reduction of dimensions and power consumption, which is an exciting technology due to the smaller form factor, improved global signaling, and ability to integrate heterogeneous circuits within a single platform.…”

“…On the other hand, the electrical characteristics of TSVs are critical to the performance of mmW 3D ICs due to the abundant utilization of TSVs. Therefore, many studies have been carried out for modeling of TSV interconnects together with their fabrication technologies . What is more, TSVs exploiting new structures and materials were also researched to enhance the performance of 3D ICs …”