Model of thermal oxidation of silicon at the volume-reaction front

Dispersive transport of Hole polarons in MOS-structures after the ionizing irradiation

“…Figure 5 shows that parameter α grows from 0.145 to 0.24 as the thickness decreases. This variation of α is attributable to the presence of a stressed region (up to 30−50 nm in size), which is characterized by a rearranged structure and altered bridge angles, in thermal silicon dioxide near the IPB with silicon [19,20]. Note that the value of α is independent of temperature, but depends on the method of production of thermal silicon oxide.…”

Control of the Pore Texture in Nanoporous Silicon via Chemical Dissolution

“…The porous volume and the specific surface decreased to 3.6 × 10 –3 mL/chip and 2.01 m 2 /chip, respectively. In this case, upon oxidation, insertion of oxygen atoms in the silicon matrix provokes the swelling of the pSi walls. , Such a swelling induces a decrease of the pore diameter and a decrease of the porous volume and surface area. The C BET parameter for the oxidized sample C BET ∼ 75, which is much larger than for the freshly etched sample, is consistent with what is usually obtained for silicon oxide surfaces .…”

Si Nanocrystal Arrays Created in SiO2 Matrix by High-Energy Ion Bombardment

“…First of all, it should be noted that the diffusivity of silicon in SiO 2 at temperatures 1110-1400°C is rather low, 10 -21 -10 -17 cm 2 ·s -1 (Mathiot et al, 2003;Tsoukalas et al, 2001;Takahashi et al, 2003). According to the data of (De Almeida et al, 2000;Aleksandrov et al, 2008), oxygen possesses a much higher diffusivity in SiO 2 amounting to 10 -9 -10 -7 cm 2 ·s -1 . That is why the formation processes of Si nanocrystals in Si-rich oxide layers are usually described with consideration given to the fact that those processes should involve migration of oxygen atoms from the region of the growing silicon nanoparticle (see, for instance, Khomenkova et al, 2007).…”