Abstract:It is shown that the description of the dispersive transport of hole polarons based on the multiple capture model makes it possible to quantitatively describe the kinetics of the accumulation and relaxation of space charge in MOS-structures after ionizing irradiation at low temperatures (80-293 K). Modeling of time dependences of threshold voltage on temperature, electric field strength and gate oxide thickness is carried out. It is shown that the kinetics of space charge relaxation is determined by the hoppin… Show more
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