Model of growth of single-domain GaAs layers on double-domain Si substrates by molecular beam epitaxy

Abstract

Growth of single-domain GaAs (100) layers on double-domain Si (100) substrates by molecular beam epitaxy has been investigated. It has been shown that domain orientation of the top layer of GaAs depends on the surface structure of a buffer layer. The size of atomic step heights on the Si surface and the As-Si interaction temperature before film growth are not important factors in controlling domain orientation. Suppression of an antiphase disorder is explained in terms of nonstoichiometric antiphase boundary annihilation operative during growth.

Effect of Twinning on the Photoluminescence and Photoelectrochemical Properties of Indium Phosphide Nanowires Grown on Silicon (111)

“…Continued feeding of TMIn and TBP, however, allows the indium droplets to form on top of the wetting layer with subsequent nanowire growth by VLS. Another effect of annealing the 4° miscut substrate in TBP may be to create double-height steps, which eliminates antiphase domains upon the coalescence of nearby crystal nuclei. − …”

“…Another effect of annealing the 4°miscut substrate in TBP may be to create double-height steps, which eliminates antiphase domains upon the coalescence of nearby crystal nuclei. [27][28][29] Both samples A and B exhibit photoluminescence at 920 nm, which corresponds to the InP bandgap energy of 1.35 eV. By contrast, the photoluminescence peak for sample C is at 903 nm, or 1.38 eV.…”

Crystal Phase Control during Epitaxial Hybridization of III‐V Semiconductors with Silicon

“…Regarding the growth on planar substrates, it was occasionally demonstrated back in the 80s that APBs could selfannihilate within the III-V layer, eventually leading to a decrease of the density of APBs emerging at the III-V surface. [35,[41][42][43][44][45] Although several studies have later corroborated these observations, [46][47] the process behind the annihilation mechanism remains unclear. In 1987, Kawbe et al proposed the existence of two types of APBs: APBs that run perpendicular to the interface and propagate through the whole III-V layer, and APBs that run on tilted planes and self-annihilate during growth.…”

“…Regarding the growth on planar substrates, it was occasionally demonstrated back in the 80s that APBs could self‐annihilate within the III‐V layer, eventually leading to a decrease of the density of APBs emerging at the III‐V surface. [ 35,41–45 ] Although several studies have later corroborated these observations, [ 46–47 ] the process behind the annihilation mechanism remains unclear. In 1987, Kawbe et al.…”

Selective area metalorganic vapor-phase epitaxy of gallium arsenide on silicon

“…with all double-height steps, so as to prevent anti-phase domains from forming. This structure has been obtained by several groups on single-domain Si (1 0 0) starting surfaces [27][28][29]. However, obtaining a single-domain As-passivated structure on Si (1 0 0) surfaces that are not originally single domain is difficult.…”