Model-based scanner tuning in a manufacturing environment

Shih, C.-Y.; Peng, Rong; Chien, Tsung-Chih; Guo, Yuhao; Lee, J. Y.; Chang, Chih-Hsien; Huang, Peter; Liu, H. H.; Lee, H. J.; Lin, John C.; Chang, Kai; Yeh, C. P.; Shao, W.; Cao, Heidi B.; Bruguier, A.; Xie, Xu; Chang, C. H.; Aldana, Rafael; Cao, Yu; Goossens, R.J.G.; Hsieh, Simon

doi:10.1117/12.813974

Cited by 7 publications

(2 citation statements)

References 3 publications

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“…These are primarily being applied before or during final mask layout generation, although model-based approaches have also been introduced for scanner tuning to improve tool matching or control of lens-heating effects. [4][5][6] The two key extensions from the existing framework are 1) a closer integration of the computational lithography component, for the purpose of reticle layout analysis, and 2) larger utilization of scanner metrology data, in particular topography and focus related data from the tool's leveling system.…”

Section: Ommentioning

confidence: 99%

A new paradigm for in-line detection and control of patterning defects

Hunsche¹,

Jochemsen²,

Jain³

et al. 2015

SPIE Proceedings

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With continuously shrinking design rules and corresponding low-k1 lithography, defectivity and yield are increasingly dominated by systematic patterning defects. The size of these yield-limiting defects is shrinking along with feature size, making their detection and verification more difficult. We discuss a novel, holistic approach to pattern defect detection and control, which integrates full chip layout analysis and hybrid wafer metrology data to predict wafer locations with highest probability for defect occurrence. We assess the various components of this flow by an experimental study on a 10 nm BEOL process at IMEC, using state-of-the-art negative tone development (NTD) and triple Litho-Etch patterning process. Downloaded From: http://proceedings.spiedigitallibrary.org/ on 05/19/2015 Terms of Use: http://spiedl.org/terms Proc. of SPIE Vol. 9424 94241B-2 Downloaded From: http://proceedings.spiedigitallibrary.org/ on 05/19/2015 Terms of Use: http://spiedl.org/terms Proc. of SPIE Vol. 9424 94241B-8 Downloaded From: http://proceedings.spiedigitallibrary.org/ on 05/19/2015 Terms of Use: http://spiedl.org/terms

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Section: Ommentioning

confidence: 99%

A new paradigm for in-line detection and control of patterning defects

Hunsche¹,

Jochemsen²,

Jain³

et al. 2015

SPIE Proceedings

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“…The MBOPC platform must be able to support full-chip simulation for effective and reliable scanner tuning of actual device layouts. [1] The capability of full-chip CL models to accurately predict across a continuum of focus-exposure conditions has been established some time ago, and has been utilized e.g. in process-window aware OPC.…”

Section: Introductionmentioning

confidence: 99%

Improved model predictability by machine data in computational lithography and application to laser bandwidth tuning

Hunsche¹,

Zhao²,

Xie³

et al. 2009

SPIE Proceedings

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Computational lithography (CL) is becoming more and more of a fundamental enabler of advanced semiconductor processing technology, and new requirements for CL models are arising from new applications such as model-based process tuning. In this paper we study the impact of realistic machine parameters that can be incorporated in a modern CL model, and provide an experimental assessment of model improvements with respect to prediction of scanner tuning effects. The data demonstrates improved model accuracy and prediction by inclusion of scanner-type specific modeling capabilities and machine data in the CL model building process. In addition to scanner effects, we study laser bandwidth tuning effects and the accuracy of corresponding model predictions by comparison against experimental data. The data demonstrate that the models predict well wafer CD variations resulting from laser BW tuning. We also find that using realistic spectral density distribution of the laser can provide more accurate results than the commonly assumed modified Lorentzian line shape.

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