We report on a systematic study of electronic transport in tetracene single crystals by means of space charge limited current spectroscopy and time of flight measurements. Both I-V and time of flight measurements show that the room-temperature effective hole-mobility reaches values close to µ ≃ 1 cm 2 /Vs and show that, within a range of temperatures, the mobility increases with decreasing temperature. The experimental results further allow the characterization of different aspects of the tetracene crystals. In particular, the effects of both deep and shallow traps are clearly visible and can be used to estimate their densities and characteristic energies. The results presented in this paper show that the combination of I-V measurements and time of flight spectroscopy is very effective in characterizing several different aspects of electronic transport through organic crystals.
We describe the performance of the Band 3 and Band 4 Flight Model mixer units for Herschel/HIFI Instrument. These units are part of the Focal Plane Unit of HIFI. The band 3 and 4 mixer units cover the 800-960 GHz and 960-1120 GHz frequency range and have a 4-8 GHz IF frequency band. The sensitivities of the mixers within the HIFI setting are excellent and are the best reported to date. The DSB receiver noise performance in the HIFI FPU environment ranges from 150 K at 800 GHz to 350 K at 1120 GHz. This sensitivity and the absence of atmospheric attenuation will reduce the necessary observation time for astronomical observations in this frequency range by at least two orders of magnitude compared to ground based facilities.
With continuously shrinking design rules and corresponding low-k1 lithography, defectivity and yield are increasingly dominated by systematic patterning defects. The size of these yield-limiting defects is shrinking along with feature size, making their detection and verification more difficult. We discuss a novel, holistic approach to pattern defect detection and control, which integrates full chip layout analysis and hybrid wafer metrology data to predict wafer locations with highest probability for defect occurrence. We assess the various components of this flow by an experimental study on a 10 nm BEOL process at IMEC, using state-of-the-art negative tone development (NTD) and triple Litho-Etch patterning process. Downloaded From: http://proceedings.spiedigitallibrary.org/ on 05/19/2015 Terms of Use: http://spiedl.org/terms Proc. of SPIE Vol. 9424 94241B-2 Downloaded From: http://proceedings.spiedigitallibrary.org/ on 05/19/2015 Terms of Use: http://spiedl.org/terms Proc. of SPIE Vol. 9424 94241B-8 Downloaded From: http://proceedings.spiedigitallibrary.org/ on 05/19/2015 Terms of Use: http://spiedl.org/terms
We describe the current status of the HIFI mixer units for Band 3 and Band 4. The mixer units cover the 800-960 GHz and 960-1120 GHz frequency range and have a 4-8 GHz IF frequency band. The major requirements and the design strategy are described. Functional tests of the magnet, the de-flux heater, IF-circuit, and the corrugated horn were performed. Details of the design of the mixer units and the performance status are presented. The DSB receiver noise performance ranges from 210 K at 850 GHz to 430 K at 1075 GHz.
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