2011
DOI: 10.1088/0268-1242/27/1/015005
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Modal gain and its diameter dependence in single-ZnO micro- and nanowires

Abstract: Nanowires can successfully be used as building blocks for nanoscaled laser devices. Calculations predict an extremely large modal gain for nanowires made up of semiconductors such as GaN or ZnO. We determine experimentally the modal gain of single-ZnO nano-and microwires to approach 5000 cm −1 under particular size conditions. We demonstrate the distinct and sensitive dependence of the modal gain on the wire diameter and discuss optimizations for lasing of these wires.

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Cited by 9 publications
(9 citation statements)
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“…This value is similar to experimentally observed values, see refs. , , and , but about two orders of magnitudes lower than recently calculated values, see refs. and .…”
Section: Resultscontrasting
confidence: 57%
See 1 more Smart Citation
“…This value is similar to experimentally observed values, see refs. , , and , but about two orders of magnitudes lower than recently calculated values, see refs. and .…”
Section: Resultscontrasting
confidence: 57%
“…The length of the nanowires considered varied between 7 ± 2.5 µm, see Figure . While nanowire length is known to influence cavity losses, the measured threshold variations of the nanowire lasers considered were much larger than the variation in nanowire length. Plasmon nanowire lasers based on monocrystalline silver films show on average an about 20% lower threshold than other devices (with average threshold of 1.69 GW cm −2 compared to 2.16 and 2.10 GW cm −2 ).…”
Section: Resultsmentioning
confidence: 93%
“…2(a), as a result of damping and losses, depending on the quality of the wire under investigation. Recently, Richters et al [38] measured the modal gain spectrum of a single ZnO nanowire and found a maximum of 0:4 m À1 at 3.24 eV. The laser emission photon energy of a ZnO nanowire at room temperature is typically about 3.2 eV, as can be seen, for example, in Fig.…”
mentioning
confidence: 91%
“…established that material gains of order 4 × 10 3 cm −1 can be maintained for GaN nanolasers [28]. Moreover, experimental results confirm that modal gain about 4.8 × 10 3 cm −1 can be achieved for a material gain in the range of 5 × 10 3 cm −1 to 10 × 10 3 cm −1 [29]. On this basis, for the specific calculations performed in this paper, the core semiconductor is considered to provide a material gain of 5 × 10 3 cm −1 over all wavelengths of interest.…”
Section: Laser Structurementioning
confidence: 84%