The response of nano-lasers to direct current modulation has been analysed in both the small signal and large signal regimes. Calculations have been performed using rate equations which include the Purcell cavity-enhanced spontaneous emission factor, F, and the spontaneous emission coupling factor β. It is observed that in general increased F and β reduce the 3dB direct current modulation bandwidth. Conditions are identified where the peak modulation response at resonant frequencies 35GHz and 30 GHz can be achieved. For both small and large signal regimes modulation bandwidth of approximately 55GHz can be achieved.
Design of cylindrical metal-clad semiconductor nano-lasers is undertaken. Specific attention is given to determining the modal gain in structures supporting TM 01 Surface Plasmon Polarition (SPP) modes. For representative structures it is indicated that cavity lengths of order 100 µm enable lasing action. In comparison structures supporting TE 01 core-confined modes having cavity lengths of order 10 µm may sustain lasing. The analysis methodology adopted offers means to affect the design of candidate semiconductor lasers for bespoke applications.
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