Mobility simulation of a novel Si/SiGe FET structure

Abramo, A.; Bude, J.; Venturi, F.; Pinto, M.R.

doi:10.1109/55.484123

Cited by 11 publications

(11 citation statements)

References 11 publications

(15 reference statements)

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“…Simulation studies on strained-Si-channel high-performance HFETs have been reported by several workers [116][117][118]. Abramo et al [117] have presented a study on a novel Si/SiGe structure (n-MOSFET) simulated by means of a one-dimensional quantum mechanical approach which accounts for the quantum nature of the 2DEG. In the simulation, energy splitting between degenerate conduction band valleys of strained-Si layer, optical and elastic acoustic phonon scattering among subbands and surface roughness scattering were implemented.…”

Section: Simulation Of Strained-si-channel Mosfetsmentioning

confidence: 99%

Strained-Si heterostructure field effect transistors

Maiti

Bera

Chattopadhyay

1998

Semicond. Sci. Technol.

119

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The purpose of this review article is to report on the recent developments and the performance level achieved in the strained-Si/SiGe material system. In the first part, the technology of the growth of a high-quality strained-Si layer on a relaxed, linear or step-graded SiGe buffer layer is reviewed. Characterization results of strained-Si films obtained with secondary ion mass spectroscopy, Rutherford backscattering spectroscopy, atomic force microscopy, spectroscopic ellipsometry and Raman spectroscopy are presented. Techniques for the determination of bandgap parameters from electrical characterization of metal-oxide-semiconductor (MOS) structures on strained-Si film are discussed. In the second part, processing issues of strained-Si films in conventional Si technology with low thermal budget are critically reviewed. Thermal and low-temperature microwave plasma oxidation and nitridation of strained-Si layers are discussed. Some recent results on contact metallization of strained-Si using Ti and Pt are presented. In the last part, device applications of strained Si with special emphasis on heterostructure metal oxide semiconductor field effect transistors and modulation-doped field effect transistors are discussed. Design aspects and simulation results of n-and p-MOS devices with a strained-Si channel are presented. Possible future applications of strained-Si/SiGe in high-performance SiGe CMOS technology are indicated.

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Section: Simulation Of Strained-si-channel Mosfetsmentioning

confidence: 99%

Strained-Si heterostructure field effect transistors

Maiti

Bera

Chattopadhyay

1998

Semicond. Sci. Technol.

119

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“…The idea of enhancing the mobility, and hence performance, of pMOSFETs in CMOS circuits through the incorporation of SiGe, has attracted a lot of interest (see, for example, [1] and references therein). Recent results for devices grown on virtual (relaxed) substrates are very encouraging [2][3][4], and the predicted performance is excellent [5]. However, such structures require a considerable modification of the conventional silicon process.…”

Section: Introductionmentioning

confidence: 98%

On the low-temperature mobility of holes in gated oxide Si/SiGe heterostructures

Lander

Kearney

Horrell

et al. 1997

Semicond. Sci. Technol.

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A detailed comparison is made between theory and experiment for the low-temperature mobility of holes in gated oxide, coherently strained Si/SiGe heterostructures. We conclude that the mobility is mainly limited by interface impurities, conventional surface roughness and strain fluctuations; by contrast, we argue that alloy scattering is comparatively weak. Comments regarding possible mobility degradation due to oxide formation are also made.

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“…The simulations were carried out by self-consistently solving the Poisson and Schrödinger equations with a Gummel-like iteration [11]. The envelope function equation (i.e.…”

Section: Simulated Structure and Methodologymentioning

confidence: 99%

“…In this study, a self-consistent one-dimensional (ID) Poisson-Schrödinger solver [11] is used to determine the electrostatic behavior of devices featuring highly non-uniform doping profiles, which are more realistic for the fabrication of US-MOSFETs. As a case study, quantum effects in an epitaxial-channel (EPI) MOS structure are investigated.…”

Section: Introductionmentioning

confidence: 99%

Analysis of quantum effects in nonuniformly doped MOS structures

Fiegna

Abramo²

1998

IEEE Trans. Electron Devices

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This paper presents results from the self-consistent solution of Schrödinger and Poisson equations obtained in one-dimensional non-uniformly doped MOS structures suitable for the fabrication of very short tcansistors. Different issues are considered and investigated, including quantum-induced threshold voltage shifts, low-field electron effective mobility and gate-tochannel capacitance. The reported results give indications for the optimization of n-MOS channel doping profiles suitable for the fabrication of ultra-short MOSFETs.

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Mobility simulation of a novel Si/SiGe FET structure

Cited by 11 publications

References 11 publications

Strained-Si heterostructure field effect transistors

Strained-Si heterostructure field effect transistors

On the low-temperature mobility of holes in gated oxide Si/SiGe heterostructures

Analysis of quantum effects in nonuniformly doped MOS structures

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