Mobility of Holes and Electrons in High Electric Fields

Ryder, Elaine

doi:10.1103/physrev.90.766

Cited by 350 publications

(55 citation statements)

References 8 publications

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“…For the carrier injection described by substitution (12) The feedback works toward 0 n n = . For carriers with a specific energy ε, the charge distribution shows a repetition of the unit structure with a short period 1 x , and the repetition begins at x=x 0 (…”

Section: Discussionmentioning

confidence: 99%

“…Velocity saturation (actually, current density saturation) shown in Ryder's data 1) is a characteristic phenomenon in high-field transport 8) . It was extensively investigated by Shockley 2) and his successors, usually using the balance-of-energy equation of hot carriers and assuming RTA.…”

Section: E M Nq I τ =mentioning

confidence: 99%

“…A half century ago, Ryder 1) and Shockley 2) investigated the current in germanium and silicon and indicated the saturation of carrier velocity at a high field.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

New Solution to High-Field Transport in Semiconductors: II. Velocity Saturation and Ballistic Transmission

Natori

2009

jjap

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High-field transport in semiconductor diodes at room temperature is analyzed in the reflection-transmission regime. The pseudo-one-dimensional Boltzmann equation with a constant electric field is transformed into a pair of carrier flux equations. They are analytically solved neither with the relaxation time approximation nor with the perturbation expansion.The carrier energy relaxation due to optical phonon emission is essential in high-field transport. The current-and velocity-field characteristics are closely related to flux transmission through a specific layer, in which the elastic scattering is dominant and the optical phonon emission is absent. If the transmission coefficient is much less than unity, the proportionality of the current to the field results as the Ohm's law in high-field range. The current and velocity tend to saturate when the coefficient approaches unity (ballistic transmission). This result provides simple insight into transport in nanoscale devices.

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Section: Discussionmentioning

confidence: 99%

Section: E M Nq I τ =mentioning

confidence: 99%

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New Solution to High-Field Transport in Semiconductors: II. Velocity Saturation and Ballistic Transmission

Natori

2009

jjap

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“…Experimentally, the dependence of pulse shapes on the electron drift velocity 110 anisotropy in closed-end HPGe detectors has been clearly established [14], as well as its influence on tracking algorithms [15]. Anisotropy in the drift velocity for holes is also a major concern when dealing with semi-conducting devices operating at high-115 electric fields, where deviation from low-field ohmic behavior is observed [16].…”

Section: Pulse Shape Calculationsmentioning

confidence: 99%

Sensitivity of GRETINA position resolution to hole mobility

Prasher

Cromaz

Merchán

et al. 2017

Nuclear Instruments and Methods in Physics Research Section A:

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The sensitivity of the position resolution of the gamma-ray tracking array GRETINA to the hole chargecarrier mobility parameter is investigated. The χ 2 results from a fit of averaged signal ("superpulse") data exhibit a shallow minimum for hole mobilities 15% lower than the currently adopted values. Calibration data on position resolution is analyzed, together with simulations that isolate the hole mobility dependence of signal decomposition from other effects such as electronics cross-talk. The results effectively exclude hole mobility as a dominant parameter for improving the position resolution for reconstruction of gamma-ray interaction points in GRETINA.

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“…A half century ago, Ryder 1) and Shockley 2) investigated the current in germanium and silicon, and proposed the theory of the drift-diffusion current 3) as well as the velocity saturation. Since then, the theory has served as the central concept of semiconductor electronics.…”

Section: Introductionmentioning

confidence: 99%

New Solution to High-Field Transport in Semiconductors: I. Elastic Scattering without Energy Relaxation

Natori

2009

jjap

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High-field transport in a semiconductor diode structure at room temperature is newly analyzed in a reflection-transmission regime. The Boltzmann equation with a constant electric field E is applied to a semiconductor channel of length L, and a pair of flux equations is analytically solved. For applied fields larger than ~500 V/cm for silicon, the energy relaxation by the acoustic phonon scattering hardly catches up with the energy gain from the field, and the kinetic energy accumulates generating hot carriers. As a limiting case, in this paper we analyze carrier transport with elastic scattering and without energy relaxation. Current density proportional to L E / is derived for a wide electric field range. At much higher fields, the ballistic transmission of carriers through the channel occurs, and current density tends to saturate. The result will find its application in sufficiently small systems, where energy relaxation by optical phonon scattering is not dominant.

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Mobility of Holes and Electrons in High Electric Fields

Cited by 350 publications

References 8 publications

New Solution to High-Field Transport in Semiconductors: II. Velocity Saturation and Ballistic Transmission

New Solution to High-Field Transport in Semiconductors: II. Velocity Saturation and Ballistic Transmission

Sensitivity of GRETINA position resolution to hole mobility

New Solution to High-Field Transport in Semiconductors: I. Elastic Scattering without Energy Relaxation

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