Abstract:Abstract. The bulk lifetime τn and diffusion length Ln of minority carriers vary through the height of a cast multicrystalline silicon (mc-Si) block. This variation is due to the segregation of metallic impurities during the directional solidification and the native impurity concentrations increase from the bottom to the top of the ingot, which is solidified last, while the ingot bottom, which is solidified first, is contaminated by the contact with the crucible floor. It is of interest to verify if a correlat… Show more
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