Limiting factors of gettering treatments in mc-Si wafers from the metallurgical route

Perichaud, I.; Martinuzzi, S.; Degoulange, J.; Trassy, C.

doi:10.1016/j.mseb.2008.11.030

Cited by 3 publications

(2 citation statements)

References 6 publications

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“…13, many fundamental questions on the basic underlying microscopic mechanisms are still poorly understood, among them the detailed knowledge of Fe lattice sites in different types of silicon, or when forming complexes with other impurities, such as dopants, or implantation defects, such as vacancies. For instance, the P-diffusion gettering process, which is nowadays widely used in the fabrication of n-p-junction Si solar cells [13][14][15][16][17][18][19][20] is known to create on top of a low p-doped multi-crystalline Si wafer highly-doped n + -regions, in which Fe is trapped. It has been recently suggested 20 that the high concentration of vacancies created during P-diffusion is a key ingredient in the gettering process; at the same time it is expected from theoretical grounds that Fe becomes less electrically active when it is trapped by Si vacancies 21 .…”

Section: Introductionmentioning

confidence: 99%

Influence of n+ and p+ doping on the lattice sites of implanted Fe in Si

Silva

Wahl

Correia

et al. 2013

Journal of Applied Physics

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We report on the lattice location of implanted 59 Fe in n + -and p + -type Si by means of emission channeling. We found clear evidence that the preferred lattice location of Fe changes with the doping of the material. While in n + -type Si Fe prefers displaced bond-centered (BC) sites for annealing temperatures up to 600 • C, changing to ideal substitutional sites above 700 • C, in p + -type Si Fe prefers to be in displaced tetrahedral interstitial positions after all annealing steps. The dominant lattice sites of Fe in n + -type Si therefore seem to be well characterized for all annealing temperatures by the incorporation of Fe into vacancy-related complexes, either into single vacancies which leads to Fe on ideal substitutional sites, or multiple vacancies, which leads to its incorporation near BC sites. In contrast, in p + -type Si the major fraction of Fe is clearly interstitial (near-T or ideal T) for all annealing temperatures. The formation and possible lattice sites of Fe in FeB pairs in p + -Si are discussed. We also address the relevance of our findings for the understanding of the gettering effects caused by radiation damage or P-diffusion, the latter involving n + -doped regions.

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Section: Introductionmentioning

confidence: 99%

Influence of n+ and p+ doping on the lattice sites of implanted Fe in Si

Silva

Wahl

Correia

et al. 2013

Journal of Applied Physics

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“…This process is known as the Ethyl Corporation process, after the name of the US chemical company that developed it. This process is presently run by the US Corporation MEMC in Pasadena, Texas [19], (iv) the processes of gettering effect which has been largely investigated [20][21][22]. The getter effect consist to remove harmful impurities electrically active regions of the component and to confine them in inactive areas of materials.…”

Section: Introductionmentioning

confidence: 99%

Low-cost solar grade silicon powder through iterative gettering of thermally treated porous silicon

Khalifa

Atyaoui

Ouertani

et al. 2016

Materials Research Bulletin

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Millisecond annealing for advanced doping of dirty-silicon solar cells

Prucnal

Abendroth

Krockert

et al. 2012

Journal of Applied Physics

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Cost reduction is the overall goal in the further development of solar cell technologies. Multicrystalline silicon has attracted considerable attention because of its high stability against light soaking. In case of solar grade mc-Si, the rigorous control of metal impurities is desirable for solar cell fabrication. Although ion implantation doping got very recently distinct consideration for doping of monocrystalline solar material, efficient doping of multicrystalline solar material remains the main challenge to reduce costs. The influence of different annealing techniques on the optical and electrical properties of mc-Si solar cells was investigated. Flash lamp annealing (FLA) in the ms-range is demonstrated here as a very promising technique for the emitter formation at an overall low thermal budget. It could be presented that FLA at 1000 °C for 3 ms even without preheating is sufficient to recrystallize implanted silicon. The sheet resistance of FLA samples shows the values of about 50 Ω/sq. Especially, the minority carrier diffusion length for the FLA samples is in the range of 80 μm without surface passivation. This is up to one order of magnitude higher than that observed from rapid thermal annealing or furnace annealing samples. This technology shows great promise to replace the conventional POCl3-doping.

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Limiting factors of gettering treatments in mc-Si wafers from the metallurgical route

Cited by 3 publications

References 6 publications

Influence of n+ and p+ doping on the lattice sites of implanted Fe in Si

Influence of n+ and p+ doping on the lattice sites of implanted Fe in Si

Low-cost solar grade silicon powder through iterative gettering of thermally treated porous silicon

Millisecond annealing for advanced doping of dirty-silicon solar cells

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