MINIMOS—A two-dimensional MOS transistor analyzer

Abstract

We describe a user-oriented software tool-MINIMOS-for the two-dimensional numerical simulation of planar MOS transistors. The fundamental semiconductor equations are solved with sophisticated programming techniques to allow very low computer costs. The program is able to calculate the doping profiles from the technological parameters specified by the user. A new mobility model has been implemented which takes into account the dependence on the impurity concentration, electric field, temperature, and especially the distance t o the Si-Si02 interface. The power of the program is shown by calculating the two-dimensional internal behavior of three MOST'S with 1-pm gate length differing in respect to the ion-implantation steps. In this way, the threshold voltage shift by a shallow implantation and the suppression of punchthrough by a deep implantation are demonstrated. By calculating the output characteristics without and with mobility reduction, the essential influence of this effect is shown. From the subthreshold characteristics, the suppression of short-channel effects by ion implantation becomes apparent. The MINIMOS program is available for everyone for just the handling costs.

Numerical modeling of silicon quantum dots

“…where γ −1 n = qµ n exp(ψ) and λ = exp(−ψ n ), is transformed into finite-difference equation by using the technique due to Scharfetter et al [15]. In eqn (9), the quantity γ −1 n is defined on a staggered grid by linear interpolation of the values of γ −1 n from the main grid.…”

“…In essence, we follow the two-dimensional approach due to Selberherr et al [15] which we extend from two to three dimensions.…”

Chalcogenides-based quantum dots: Optical investigation using first-principles calculations

“…For the solution of the continuity equation, the efficient difference approximations proposed by Scharfetter and Gummel [11] have extended to three dimensions. In essence, they have followed the two-dimensional approach due to Selberherr et al [12] extend two to three dimensions.…”

Strain determination in silicon microstructures by combined convergent beam electron diffraction, process simulation, and micro-Raman spectroscopy

“…At the beginning of the 1980's, numerical implementation of simple models allowing one-dimensional ͑1D͒ or two-dimensional ͑2D͒ analysis of the electrical behavior of transistors 31,32 or of the microfabrication of integrated components [33][34][35] are already available. With the growing power of computers and the spreading of TCAD in the IC industry, the number of 2D codes grew quickly [36][37][38][39][40] and three-dimensional ͑3D͒ solutions appeared in the 1990's.…”