Miniaturized multi-band filter banks for Extravehicular radio (EVA) Applications

IEEE Trans. Ultrason., Ferroelect., Freq. Contr.

et al. 2010

213

102

This paper reports on the design and experimental verification of a new class of thin-film (250 nm) superhighfrequency laterally-vibrating piezoelectric microelectromechanical (MEMS) resonators suitable for the fabrication of narrow-band MEMS filters operating at frequencies above 3 GHz. The device dimensions have been opportunely scaled both in the lateral and vertical dimensions to excite a contourextensional mode of vibration in nanofeatures of an ultra-thin (250 nm) AlN film. In this first demonstration, 2-port resonators vibrating up to 4.5 GHz have been fabricated on the same die and attained electromechanical coupling, kt^2, in excess of 1.5%. These devices are employed to synthesize the highest frequency MEMS filter (3.7 GHz) based on AlN contour-mode resonator technology ever reported. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of the University of Pennsylvania's products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.This journal article is available at ScholarlyCommons: http://repository.upenn.edu/ese_papers/522 0885-3010/$25.00 © 2010 IEEE 38 IEEE TransacTIons on UlTrasonIcs, FErroElEcTrIcs, and FrEqUEncy conTrol, vol. 57, no. 1, JanUary 2010Abstract-This paper reports on the design and experimental verification of a new class of thin-film (250 nm) superhigh-frequency laterally-vibrating piezoelectric microelectromechanical (MEMS) resonators suitable for the fabrication of narrow-band MEMS filters operating at frequencies above 3 GHz. The device dimensions have been opportunely scaled both in the lateral and vertical dimensions to excite a contourextensional mode of vibration in nanofeatures of an ultra-thin (250 nm) AlN film. In this first demonstration, 2-port resonators vibrating up to 4.5 GHz have been fabricated on the same die and attained electromechanical coupling, k t 2 , in excess of 1.5%. These devices are employed to synthesize the highest frequency MEMS filter (3.7 GHz) based on AlN contour-mode resonator technology ever reported.

mentioning

confidence: 99%

“…High-performance aln cMr devices in the very-and ultra-high-frequency (VHF-UHF) bands with quality factors between 1,000 and 4,000 have been previously demonstrated [5], [11]. nevertheless, the capability of this technology to operate in the sHF band has not been extensively explored to date.…”

mentioning

confidence: 99%

Super-high-frequency two-port AlN contour-mode resonators for RF applications

IEEE Trans. Ultrason., Ferroelect., Freq. Contr.

et al. 2010

213

102

“…High performance two-port AlN CMRs in the Very High Frequency (VHF) range with quality factor between 1,000 and 2,000 have been previously demonstrated [3,4]. In this work, the device layout has been modified to overcome the fundamental transduction challenges associated with previously unexplored frequencies in the SHF range.…”

Section: Designmentioning

confidence: 99%

“…Neglecting the parasitic components and assuming values of k t 2 -Q >> 1, the IL of the system can be expressed as in (4) and its bandwidth as in (5). (4) (5) It is important to note that the presence of parasitic components (C p ≈ C p1 +C p2 /2 and R p , Fig.…”

Section: Ghz Narrow-band Aln Cmr Filtermentioning

confidence: 99%

“…A very promising solution to synthesize integrated and high-performance RF filters is based on microelectromechanical (MEMS) resonators. Different resonator technologies based on electrostatic [1,2] or piezoelectric [3] transduction have been investigated and among these, Aluminum Nitride (AlN) Contour-Mode MEMS resonator (CMR) [3] has emerged as one of the most promising in enabling the fabrication of multiple frequency and high performance resonators on the same silicon chip [3,4]. This very important feature makes the CMR technology preferable to the conventional FBAR or quartz crystal technologies, for which only one frequency of operation can be achieved on a single silicon substrate.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Ultra-thin Super High Frequency two-port ALN contour-mode resonators and filters

TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference

et al. 2009

This paper reports on the demonstration of a new class of ultra-thin (250 nm thick) super high frequency (SHF) AlN piezoelectric two-port resonators and filters. A thickness field excitation scheme was employed to excite a higher order contour extensional mode of vibration in an AlN nano plate (250 nm thick) above 3 GHz and synthesize a 1.96 GHz narrow-bandwidth channel-select filter. The devices of this work are able to operate over a frequency range from 1.9 to 3.5 GHz and are employed to synthesize the highest frequency MEMS filter based on electrically self-coupled AlN contour-mode resonators. Very narrow bandwidth (0 .35%) and high off-band rejection (~ 35 dB) were achieved at an operating frequency of 1.96 GHz. This first prototype showed insertion loss of 11 dB, which can be improved to few dB if parasitic elements are eliminated or device capacitance is increased. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of the University of Pennsylvania's products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.This conference paper is available at ScholarlyCommons: http://repository.upenn.edu/ese_papers/523 ULTRA-THIN SUPER HIGH FREQUENCY TWO-PORT ALN CONTOUR-MODE RESONATORS AND FILTERSM. Rinaldi * , C. Zuniga, C. Zuo and G. Piazza University of Pennsylvania, Philadelphia, Pennsylvania, USA ABSTRACT This paper reports on the demonstration of a new class of ultra-thin (250 nm thick) Super High Frequency (SHF) AlN piezoelectric two-port resonators and filters. A thickness field excitation scheme was employed to excite a higher order contour extensional mode of vibration in an AlN nano plate (250 nm thick) above 3 GHz and synthesize a 1.96 GHz narrow-bandwidth channel-select filter. The devices of this work are able to operate over a frequency range from 1.9 to 3.5 GHz and are employed to synthesize the highest frequency MEMS filter based on electrically self-coupled AlN contour-mode resonators. Very narrow bandwidth (∼ 0.35%) and high off-band rejection (∼ 35 dB) were achieved at an operating frequency of 1.96 GHz. This first prototype showed insertion loss of 11 dB, which can be improved to few dB if parasitic elements are eliminated or device capacitance is increased.

AlN contour-mode resonators for narrow-band filters above 3 GHz

2009 IEEE International Frequency Control Symposium Joint With the 22nd European Frequency and Time Forum

et al. 2009

This paper reports on the design and experimental verification of a new class of thin-film (250 nm) super high frequency (SHF) laterally-vibrating piezoelectric microelectromechanical (MEMS) resonators suitable for the fabrication of narrow-band MEMS filters operating at frequencies above 3 GHz. The device dimensions have been opportunely scaled both in the lateral and vertical dimensions in order to excite a contourextensional mode of vibration in nano features of an ultra-thin (250 nm) aluminum nitride (AlN) film. In this first demonstration two-port resonators vibrating up to 4.5 GHz were fabricated on the same die and attained electromechanical coupling, kt^2, in excess of 1.5 %. These devices were employed to synthesize the highest frequency ever reported MEMS filter (3.7 GHz) based on AlN contour-mode resonator (CMR) technology. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of the University of Pennsylvania's products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.This conference paper is available at ScholarlyCommons: http://repository.upenn.edu/ese_papers/524