Millimeter-wave AlGaAs/InGaAs/GaAs quantum well power MISFET

Kim, B.; Matyi, R. J.; Wurtele, M.; Bradshaw, K.; Tserng, H.Q.

doi:10.1109/iedm.1988.32781

Cited by 2 publications

(1 citation statement)

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“…The MODFET can achieve very high ps•t due to its high carrier density and carrier velocity. However,its linear power performance such as power at -1dB gain compression point, P ldB , and harmonic lintermodulation levels, are usually less impressive [1], [2]. The g., degradation at high gate bias was found to be the dominant limiting factor for the power/gain saturation performance in MODFETs [3].…”

Section: Introductionmentioning

confidence: 96%

A pseudomorphic MODFET structure with excellent linear power performance at mm-wave range

Zhou

Chan

Hughes

et al.

International Technical Digest on Electron Devices Meeting

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We report the design, fabrication and excellent linear power performance at mm-wave frequency range of a modified InGaAs channel pseudomorphic MODFET structure. This structure replaced the conventional n + AlGaAs carrier supply layer by n + GaAs carrier supply layer. g., was improved at high gate bias due to the superior carrier transport property of n + GaAs compared to that of n + AlGaAs.This g., improvement results in relatively flat and broad fT and f.. .x versus gate bias curves.Consequently, record high P ldB of 0.68 W Imm with G'dB of 12.9 dB and power-added efficiency of 45% were achieved at 25 GHz on a 0.33 x 120 /lm2 device.This linear power performance, to our knowledge, is the best reported in the literature for mm-wave InGaAs pseudomorphic MODFETs of this gate length. The Pout at maximum-power-added-efficiency point was as high as 0.81 W Imm with 10.9 dB gain and power added-efficiency of 59%.

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Section: Introductionmentioning

confidence: 96%