A pseudomorphic MODFET structure with excellent linear power performance at mm-wave range

Zhou, Guo-Gang; Chan, Kam Tai; Hughes, B.; Mierzwinski, M.; Kondoh, Hiroshi

doi:10.1109/iedm.1989.74239

Cited by 11 publications

(2 citation statements)

References 12 publications

(3 reference statements)

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“…The agreement achieved when comparing a R.oot Model (based on measurements) and actual largesignal measurements is excellent [4]. Figures 5,6 and 7 show comparisons between power transfer characteristics prodluced using measured (+) and simulated ( x ) Root Models within HP-EEsof's MDS. All simulations were performed at 5GHz.…”

Section: I11 Analysismentioning

confidence: 95%

“…The device used in this study is a 0.25 x 240 pm gate InGaAs channel pseudomporphic HEMT with doping above and below the channel [6] Comparing the lairge-signal performance of the measured and simulated Root Models provides quantitative validation of the physical moldel. The agreement achieved when comparing a R.oot Model (based on measurements) and actual largesignal measurements is excellent [4].…”

Section: I11 Analysismentioning

confidence: 99%

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A large-signal physical HEMT model

Morton

Atherton

Snowden

et al.

1996 IEEE MTT-S International Microwave Symposium Digest

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This paper reports a new, efficient physical HEMT model capable of accurately predicting DC, small-and large-signal performance. It has been interfaced to an industry standard simulator which allows for accurate, large-signal simulation to be integrated into the design process. Large-signal results demonstrate the model's suitability for MMIC CAD. I IntroductionPhysical models have advantages over circuit models due to their predictive nature and ability to relate manufacturing process variations to the electrical performance of devices. The implementation of a physical model for a HEMT, however, presents quite a challenge due to the complexity of the active layers and the small geometry of the device. Nevertheless, the use of HEMTs in MMICs is now widespread, providing significant motivation for the realisation of such an approach to aid in the design of microwave devices and circuits. I1 Model DescriptionThe quasi-two-dimensional (Q2D) model used here is based on the work of Snowden and Pan-0-7803-3246-6/96/$5.00 0 IEEE toja [ 13 but incorporates several new and impolrtant features which are essential for the simulation of HEMTs 121. 'The Q2D approach is based on the assumption that the fundamental driving force for electron transport is the z-directed electric field. The potential drop from the source to drain can then be described in terms of the propagation of a Gaussian box as depicted in Figure 1. 'The charge within the Gaussian box is obtained Figure 1 : Schernatic of Q2D approach from a 'look-up table' which is generated usiing an accurate and efficient charge-control model [3]. Some of the Q2D model's important fe:atures have been reported previously [2] which enable the accurate prediction of pinch-off, brealkdown and transconductance compression. The 17591 1996 IEEE MTT-S Diigest

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Section: I11 Analysismentioning

confidence: 95%

Section: I11 Analysismentioning

confidence: 99%