2019
DOI: 10.1021/acs.jpclett.9b00960
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Millimeter-Sized Single-Crystal CsPbrB3/CuI Heterojunction for High-Performance Self-Powered Photodetector

Abstract: Millimeter-sized CsPbBr3 single crystals were prepared via a facile solvent-evaporation method in ambient environment. The heterojunction between p-type CuI and n-type CsPbBr3 was formed by a simple immersion process. The as-integrated CsPbBr3/CuI device exhibits a good rectifying behavior (ratio of 250 at ±2 V). In particular, the photodetector shows excellent self-powered characteristics under 540 nm light illumination, including high photocurrent (near 100 nA); high photosensitivity (on/off ratio of 1.5 × 1… Show more

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Cited by 104 publications
(79 citation statements)
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“…This article provides a summary of heterojunction UV PDs in recent years. The photoelectric performance of a heterojunction photodetector is determined by the composition and the way of integration 174–176. We have summarized some new developed building blocks applied in heterojunction/heterostructure UV PDs.…”
Section: Discussionmentioning
confidence: 99%
“…This article provides a summary of heterojunction UV PDs in recent years. The photoelectric performance of a heterojunction photodetector is determined by the composition and the way of integration 174–176. We have summarized some new developed building blocks applied in heterojunction/heterostructure UV PDs.…”
Section: Discussionmentioning
confidence: 99%
“…In those methods, the fabrication of p–n junctions has been proven as an effective way to facilitate the charge separation and transportation process and decrease O 2 adsorption . As a p‐type semiconductor with satisfactory properties, CuI has been utilized to fabricate p–n junctions with n‐type semiconductors including ZnO, opening possibilities for constructing high‐performance photodiodes . For instance, ZnO‐CuI/CuSCN heterojunctions were fabricated by Yang et al using spin‐coating method for UV photodetectors with semitransparency and enhanced performance .…”
Section: Introductionmentioning
confidence: 99%
“…P‐n junction‐based detectors have the advantages of wide linear range, fast response speed, low noise, and good photoelectric performance . Significant progresses in p‐n type photodetectors have been achieved with self‐powered behaviors or enhanced performance . However, it is still extremely important to fabricate self‐powered photodetectors with tailorable properties, and exploring their in‐depth mechanism for practical applications.…”
Section: Introductionmentioning
confidence: 99%
“…[13][14][15][16][17] Significant progresses in p-n type photodetectors have been achieved with self-powered behaviors or enhanced performance. [18][19][20][21][22][23] However, it is still extremely important to fabricate self-powered photodetectors with tailorable properties, and exploring their in-depth mechanism for practical applications.…”
Section: Introductionmentioning
confidence: 99%