Tunable self‐powered n‐SrTiO₃ photodetectors based on varying CuS‐ZnS nanocomposite film (p‐CuZnS, p‐CuS, and n‐ZnS)

Abstract

The heterojunction photodetector between n‐SrTiO3 (n‐STO) and p‐CuS‐ZnS (p‐CZS) is prepared by a simple chemical bath deposition. The p‐CZS/n‐STO photodetector exhibits excellent self‐powered characteristics under 390‐nm light illumination, including high photosensitivity (on/off ratio of 300), fast response speed (0.7/94.6 ms), and good wavelength selectivity (410‐380 nm). More importantly, the self‐powered n‐STO photodetectors can be regulated by varying the composition of CZS film (p‐CZS, p‐CuS, and n‐ZnS). All devices exhibit a large open‐circuit voltage and show different self‐powered behaviors because of the different built‐in electric fields. The open‐circuit voltages of the CZS/STO, CuS/STO, and ZnS/STO devices are measured to be 0.56, 0.30, and 0.35 V, respectively. This work provides a simple and effective way to fabricate tunable self‐powered photodetectors by varying the composition of the nanocomposite film.

Photosensitive activity of fabricated core-shell composite nanostructured p-CuO@CuS/n-Si diode for photodetection applications

“…The higher value of detectivity (D* = 8.19 × 10 11 Jones) was noticed for p-CuO@CuS(1:1)/n-Si based diode which indicates that the lesser noise level of the device. The detectivity of the currently developed photodetector is better as well as comparable to earlier reported ones based on CuO and CuS core-shell photodetectors such as Zhang et al reported p-CuO/n-MoS 2 with detectivity ∼ 3.27 × 10 8 Jones [ 14 ], and Zhang et al developed the n‐SrTiO3 (n‐STO) and p‐CuS‐ZnS (p‐CZS) photodetectors with detectivity ∼ 1.6 × 10 9 Jones [ 24 ]. Possible band diagram of p-CuO@CuS/n-Si diode is presented in the Fig.…”

“…Resulting implies that the p-CuO@CuS (1:1)-n/Si is more adoptable for optoelectronic application. The R values of the currently developed p-CuO@CuS(1:1)/n-Si diode is higher than previously reported values for CuO or CuS core-shell based photodetectors like Wang et al reported the nanostructured p-CuO/n-ZnO photodetector with responsivity ∼ 0.040A/W at 1 V and 0.123 A/W at 2 V [ 55 ], Sahatiya et al reported the MoS 2 (n)–CuO(p) flexible diode with responsivity ∼ 42 mA/W [ 17 ], Shin et al developed the p-CuO/n-Cu 1-x In x O core/shell UV photodetector with responsivity ∼ 0.045 A/W [ 18 ], Xu et al p‐CuS‐ZnS/n‐ZnO photodetectors with responsivity ∼ 12 mA W −1 at 300 nm [ 23 ], Zhnag et al developed the n‐SrTiO3 (n‐STO) and p‐CuS‐ZnS (p‐CZS) photodetectors with highest responsivity ∼ 5.4 μA W −1 (at 390 nm), detectivity ∼ 1.6 × 10 9 Jones [ 24 ], etc. These reports signify the current developed photodetectors is a good one as p-n junction.…”

“…In recent past CuO & CuS based core-shell photodetectors has been developed by several scientists like the p-CuO/n-MoS 2 flexible heterojunction photo detector was reported by Zhang et al with low-dark current ∼ 0.039 nA and highest detectivity ∼ 3.27 × 10 8 Jones [ 14 ], Wang et al developed the nanostructured p-CuO/n-ZnO heterojunction photodetector and observed the responsivity ∼ 0.040A/W at 1 V and 0.123 A/W at 2 V, Xie et al reported the CuO/SnO 2 UV photodetector and noticed the enhancement [ 15 ], Tian et al fabricated the In 2 Ge 2 O 7 photodetector with CuO coating and observed the high responsivity and quantum efficiency ∼ 7.34 × 10 5 A W −1 & 3.5 × 10 6 , respectively [ 16 ], Sahatiya et al reported the MoS 2 (n)–CuO(p) flexible diode on cellulose paper with ideality factor 1.89 eV, barrier height 0.243 eV, and responsivity ∼ 42 mA/W [ 17 ], Shin et al developed the p-CuO/n-Cu 1-x In x O core/shell UV photodetector and noticed the photoresponsivity ∼ 0.045 A/W [ 18 ], CuO/ZnO based UV photodetector with improved electrical nature was developed by Noothongkaew et al [ 19 ], UV detector based on ZnO/CuO was fabricated with by Vikas et al [ 20 ], Mohammadi et al reported the ZnO/NiO(CuO) photodetector with enhanced properties [ 21 ], p-CuO/n-ZnO photodetectors has been fabricated by Ji et al [ 22 ]. Xu et al p‐CuS‐ZnS/n‐ZnO photodetectors with responsivity ∼ 12 mA W −1 at 300 nm [ 23 ], Zhnag et al developed the n‐SrTiO3 (n‐STO) and p‐CuS‐ZnS (p‐CZS) photodetectors with highest responsivity ∼ 5.4 μA W −1 (at 390 nm), detectivity ∼ 1.6 × 10 9 Jones [ 24 ], Panigrahi et al fabricated n-ZnO/p-CuS photodetectors and investigated [ 25 ], etc. Along with the above-mentioned materials there are several other materials who has been employed and investigated as UV photodetectors like: Sr 2 Nb 3 O 10 with R = 1214 A W −1 , EQE = 5.6 × 10 5 %, D* = 1.4 × 10 14 Jones @270 nm and 1 V bias by Li et al [ 26 ], and several other 2D photodetectors (BP, GaSe, MoS2 and SnSe) discussed by Zhang et al [ 27 ], BaTiO 3 /MoS 2 reported by Ying et al with R λ of 120 vs 1.7 A W −1 & EQE of 4.78 × 10 4 vs 4.5 × 10 2 % @365 nm compare to bare MoS 2 [ 28 ], and Li et al reported the hybrid CuO@In 2 O 3 with R = 2.24 × 10 4 A/W [ 29 ].…”

Atomic Structure Modification for Electrochemical Nitrogen Reduction to Ammonia

“…Taking full advantage of strengthened electron transfer and surface strain, heterostructure has been a useful strategy to construct strongly coupled interface with special targets in photoelectronic devices and energy conversion. [89][90][91][92][93] In the field of catalysis, compared to a single component, heterostructure plays an important role in improving the catalytic activity of materials due to the tuned electronic structure and the enhanced active sites at the interfaces between different components. [94,95] Liang and co-workers constructed PdO/Pd heterojunctions on carbon nanotubes for electrochemical ammonia synthesis.…”

A reduced-dimensional polar hybrid perovskite for self-powered broad-spectrum photodetection

“…Self-powered photoelectric detection is of great significance to the next-generation miniature and cost-effective photoelectric devices. [1][2][3][4][5][6][7][8] Self-powered photodetection based on bulk photovoltaic effect (BPVE) of polar materials has attracted intense attention recently. [9,10] Compared to the traditional self-powered photodetectors constructed by p-n junctions or Schottky barriers, [11,12] BPVE induced self-powered photodetection eliminates complicated interface engineering and fabrication process.…”