Mid-infrared resonant light emission from GeSn resonant-cavity surface-emitting LEDs with a lateral p-i-n structure

Abstract

We demonstrate room-temperature, mid-infrared resonant electroluminescence from GeSn resonant-cavity LEDs with a lateral p-i-n configuration on a silicon-on-insulator substrate. A vertical cavity to enhance light emission in the GeSn active layer is formed by the low-index buried oxide and deposited SiO 2 layer. A planar lateral p-i-n diode structure favorable for CMOS-compatible, dense integration was designed and fabricated for current injection. Under continuous-wave electrical injection, room-temperature resonant electroluminescence was successfully observed at ∼ 1980 nm with a spectral emission factor of 2.2. These results could pave the way toward efficient electrically injected GeSn light emitters operating at room temperature.

Defect‐Engineered Electrically‐Injected Germanium‐on‐Insulator Waveguide Light Emitters at Telecom Wavelengths

“…We began with the calculation of band structures using a multi-band k•p model, considering the strain effect. [38][39][40][41] The parameters used in the calculations can be found in a previous study. [11] Figure 5a shows the schematic of the band structure of the Ge active layer.…”

“…[42,43] For Ge, the parameters used in the calculations were R Γ = 1.3 × 10 −10 cm 3 s −1 , R L = 5.1 × 10 −15 cm 3 s −1 , and C = 1.6 × 10 −30 cm 6 s −1 . [40,44] Next, we calculated the spontaneous emission rate per unit volume per unit energy interval with a Lorentzian broadening function as follows: [45]…”

Radiative Carrier Lifetime in Ge$_{1-x}$Sn$_x$ Mid-Infrared Emitters

“…Ge 1−x Sn x alloys constitute an emerging class of group IV semiconductors providing a tunable narrow bandgap, which has been highly attractive to implement scalable, silicon-compatible mid-infrared photonic and optoelectronic devices [1]. This potential becomes increasingly significant with the recent progress in nonequilibrium growth processes enabling high Sn content Ge 1−x Sn x layers and heterostructures leading to the demonstration of a variety of monolithic mid-infrared emitters and detectors [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18]. Notwithstanding the recent developments in device engineering, the impact of structural characteristics on the basic behavior of charge carriers is yet to be fully understood.…”

Mid-infrared Imaging Using Strain-Relaxed Ge1–xSnx Alloys Grown on 20 nm Ge Nanowires

“…In recent years, several strategies have been pursued to mitigate these challenges. For instance, the growth using compositionally graded Ge 1– x Sn x buffers, where the amount of Sn is controlled by temperature and precursors flow, was found to be effective in partially relaxing the compressive strain by promoting the nucleation and glide of misfit dislocations in the underlying lower Sn content layers, while enhancing the Sn incorporation and preserving the high-quality of the topmost Sn-rich layer. − Although this growth protocol has been successful in producing device-quality materials, the high density of extended defects in the underlying layers remains a source of nonradiative recombination centers and leakage current in light emitters ,,,− ,, and photodetectors. ,,,− , …”

“…For instance, the growth using compositionally graded Ge 1−x Sn x buffers, where the amount of Sn is controlled by temperature and precursors flow, was found to be effective in partially relaxing the compressive strain by promoting the nucleation and glide of misfit dislocations in the underlying lower Sn content layers, while enhancing the Sn incorporation and preserving the high-quality of the topmost Sn-rich layer. 22−24 Although this growth protocol has been successful in producing device-quality materials, the high density of extended defects in the underlying layers remains a source of nonradiative recombination centers and leakage current in light emitters 2,4,6,[9][10][11]15,19 and photodetectors. 8,13,14,[16][17][18]25 Methods for defect and strain management using layer transfer, under etching, nanomembrane release, or wafer bonding were subsequently introduced to alleviate the harmful effects of lattice mismatch-induced extended defects leading to a clear improvement in the device performance.…”