We demonstrate room-temperature, mid-infrared resonant electroluminescence from GeSn resonant-cavity LEDs with a lateral p-i-n configuration on a silicon-on-insulator substrate. A vertical cavity to enhance light emission in the GeSn active layer is formed by the low-index buried oxide and deposited
SiO
2
layer. A planar lateral p-i-n diode structure favorable for CMOS-compatible, dense integration was designed and fabricated for current injection. Under continuous-wave electrical injection, room-temperature resonant electroluminescence was successfully observed at
∼
1980
nm
with a spectral emission factor of 2.2. These results could pave the way toward efficient electrically injected GeSn light emitters operating at room temperature.
We report high-performance lateral p-i-n Ge waveguide photodetectors (WGPDs) on a Ge-on-insulator (GOI) platform that could be integrated with electronic-photonic integrated circuits (EPICs) for communication applications. The high quality Ge layer affords a low absolute dark current. A tensile strain of 0.144% in the Ge active layers narrows the direct bandgap to enable efficient photodetection over the entire range of C-and L bands. The low-index insulator layer enhances optical confinement, resulting in a good optical responsivity. These results demonstrate the feasibility of planar Ge WGPDs for monolithic GOI-based EPICs.
Ge‐on‐insulators (GOIs) have been extensively explored as a potential platform for electronic‐photonic integrated circuits (EPICs), enabling various emerging applications. Although an efficient electrically‐injected light source is highly desirable, realizing such devices with optimal light emission efficiency remains challenging. Here, the first room‐temperature electrically‐injected Ge waveguide light emitters consisting of a lateral p–i–n homojunction on a GOI platform that can be monolithically integrated with EPICs are demonstrated. A high‐quality Ge active layer is transferred onto an insulator layer with the misfit dislocations in the Ge active layer eliminated to suppress unwanted nonradiative recombination. A 0.165% tensile strain is introduced to enhance the directness of the band structure and improve the light emission efficiency. The device comprises a waveguide structure with a significantly improved optical confinement as the optical resonator and a lateral p–i–n homojunction structure as the electrical injection structure. Under continuous‐wave electrical current injection at room temperature, enhanced electroluminescence is successfully observed at telecommunications wavelengths covering the C, L, and U bands, with improved efficiency. Theoretical analysis suggests that the quantum efficiency of Ge light emitters is dramatically affected by the defect density. These results pave the way for developing efficient, room‐temperature, electrically‐injected light emitters for next‐generation GOI‐based EPICs.
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