Microwave Photonic ICs for 25 Gb/s Optical Link Based on SiGe BiCMOS Technology

Abstract

The design, simulation and experimental results of the integrated optical and electronic components for 25 Gb/s microwave photonic link based on a 0.25 µm SiGe:C BiCMOS technology process are presented. A symmetrical depletion-type Mach-Zehnder modulator (MZM) and driver amplifier are intended for electro-optical (E/O) integrated transmitters. The optical divider and combiner of MZM are designed based on the self-imaging theory and then simulated with EM software. In order to verify the correctness of the theory and material properties used in the simulation, a short test (prototype) MZM of 1.9 mm length is produced and measured. It shows an extinction ratio of 19 dB and half-wave voltage-length product of Vπ ∙ L = ~1.5 V·cm. Based on these results, the construction of the segmented modulator with several driver amplifier units is defined. The designed driver amplifier unit provides a bandwidth of more than 30 GHz, saturated output power of 6 dBm (output voltage of Vpp = 1.26 V), and matching better than −15 dB up to 35 GHz; it dissipates 170 mW of power and occupies an area of 0.4 × 0.38 mm2. The optical-electrical (O/E) receiver consists of a Ge-photodiode, transimpedance amplifier (TIA), and passive optical structures that are integrated on a single chip. The measured O/E 3 dB analog bandwidth of the integrated receiver is 22 GHz, and output matching is better than −15 dB up to 30 GHz, which makes the receiver suitable for 25 Gb/s links with intensity modulation. The receiver operates at 1.55 μm wavelength, uses 2.5 V and 3.3 V power supplies, dissipates 160 mW of power, and occupies an area of 1.46 × 0.85 mm2.

An Optical Measuring Transducer for a Micro-Opto-Electro-Mechanical Micro-g Accelerometer Based on the Optical Tunneling Effect

“…The directional coupler-which is the basic element of the OMT-is characterized by the coupling length L cr , at which the optical power is completely transferred from one waveguide into another. The coupling length is calculated as per Equation ( 8) and corresponds to the minimal transmission coefficient at the output of the passthrough port [43].…”

An Area-Efficient and Programmable 4 × 25-to-28.9 Gb/s Optical Receiver with DCOC in 0.13 µm SiGe BiCMOS

“…A multilane optical receiver with data rates exceeding hundreds of Gb/s was first functionally realized by Shibasaki, T. [2] in 2015. In order to explore performance enhancement of the optical receivers, a wide-band design of the receivers was analyzed by Kokolov, A.A. [12] in 2019, a noise optimization method was proposed by Li, D. [9] in 2016, and power and area reductions in advanced CMOS technology were made by Shahramian, S. [13] in 2019. However, there still exist some shortcomings which need to be improved in these receivers, such as bad compatibility with more than one specific operating mode; complicated trade-offs among stability [14], bandwidth, and noise [9] of the input transimpedance amplifier (TIA) stage; and high manufacturing costs due to the large chip area in SiGe BiCMOS technology, etc.…”