Microwave performance evaluation of diamond surface channel FETs

Kubovič, M.; Kasu, Makoto; Kallfass, Ingmar; Neuburger, Martin; Aleksov, A.; Koley, Goutam; Spencer, Michael G.; Kohn, E.

doi:10.1016/j.diamond.2003.11.089

Cited by 73 publications

(44 citation statements)

References 18 publications

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“…When the CH 4 concentration was 0.1%, l s was approximately 35 cm 2 /Vs and N s was 2 9 10 13 /cm 2 . The l s of a H-terminated layer on a (111) surface (35 cm 2 /Vs) was only about 25% of that obtained on a H-terminated layer on a (100) surface (150 cm 2 /Vs), 7 and was lower than that on a (111) surface (74 cm 2 /Vs) previously reported by Kasu et al,9 in which the deposition conditions were CH 4 concentration of 1%, microwave power of 1.3 kW, and substrate temperature between 650°C and 685°C. Generally, the carrier mobility (l), transconductance (g m ), and f T have the following relationships: 21…”

Section: Methodsmentioning

confidence: 95%

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Fabrication of Metal–Oxide–Diamond Field-Effect Transistors with Submicron-Sized Gate Length on Boron-Doped (111) H-Terminated Surfaces Using Electron Beam Evaporated SiO2 and Al2O3

Saito

Kim

Hirama

et al. 2011

Journal of Elec Materi

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A H-terminated surface conductive layer of B-doped diamond on a (111) surface was used to fabricate a metal-oxide-semiconductor field-effect transistor (MOSFET) using an electron beam evaporated SiO 2 or Al 2 O 3 gate insulator and a Cu-metal stacked gate. When the bulk carrier concentration was approximately 10 15 /cm 3 and the B-doped diamond layer was 1.5 lm thick, the surface carrier mobility of the H-terminated surface on the (111) diamond before FET processing was 35 cm 2 /Vs and the surface carrier concentration was 1.5 9 10 13 /cm 2 . For the SiO 2 gate (0.76 lm long and 50 lm wide), the maximum measured drain current at a gate voltage of À3.0 V was À75 mA/mm and the maximum transconductance was 24 mS/mm, and for the Al 2 O 3 gate (0.64 lm long and 50 lm wide), these features were À86 mA/mm and 15 mS/ mm, respectively. These values are among the highest reported direct-current (DC) characteristics for a diamond homoepitaxial (111) MOSFET.

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Section: Methodsmentioning

confidence: 95%

“…7,8 Further detailed studies of (100) H-terminated devices were recently reported for a radiofrequency (RF) output power over 2 W/mm at 1 GHz, and for elevated temperature characteristics up to 100°C. [9][10][11][12] These investigations should provide some of the significant results for actual diamond applications in the near future.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Metal–Oxide–Diamond Field-Effect Transistors with Submicron-Sized Gate Length on Boron-Doped (111) H-Terminated Surfaces Using Electron Beam Evaporated SiO2 and Al2O3

Saito

Kim

Hirama

et al. 2011

Journal of Elec Materi

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“…The self-aligned process was firstly proposed by Hokazono et al [4]. The details of our processes were described previously [5].…”

Section: Rf Power Diamond Fetsmentioning

confidence: 99%

Diamond RF FETs and other approaches to electronics

Kasu

Ueda

Kageshima

et al. 2008

Phys. Status Solidi (c)

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Diamond semiconductor possesses exceptional physical properties, such as high thermal conductivity, high breakdown field, and high mobility, and is therefore expected to offer the highest performance among semiconductors as high‐frequency, high‐power transistors. At present the most critical issue in achieving diamond transistors is the lack of an n‐type or p‐type dopant with low activation energy. This paper reviews approaches towards electronic‐device application of diamond done mainly by NTT Basic Research Laboratories. First it describes our diamond field‐effect transistors with 0.1‐μm gate length, which exhibit high cut‐off frequencies for the current and power gains, fT and fMAX, of 45 GHz and of 120 GHz, and output power density of 2.1 W/mm at 1 GHz. Next it shows how doping efficiency in ion implantation can be improved by using high‐pressure high‐temperature annealing. Finally, it describes our concept of diamond/nitride heterostructure and presents results that confirm its feasibility. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Metal semiconductor FETs (MESFETs) and metal insulator semiconductor FETs (MISFETs) on H-terminated surfaces on (100) substrates attained cut-off frequencies over 20 GHz with the gate length of 200 nm [12,13]. Again, most of the studies were dedicated to (100) single-crystal diamond.…”

Section: Introductionmentioning

confidence: 99%