Fabrication of diamond MISFET with micron-sized gate length on boron-doped (111) surface

Saito, Takeyasu; Kim, Huy Kang; Hirama, Kazuyuki; Umezawa, Hamao; Satoh, Mitsuya; Kawarada, Hiroshi; Okushi, Hideyo

doi:10.1016/j.diamond.2005.08.044

Cited by 11 publications

(10 citation statements)

References 23 publications

(28 reference statements)

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“…28 The figure also shows a comparison between this study (MOSFET) and a Cu/CaF 2 gate MISFET on singlecrystalline (111) diamond. 29 The estimated average maximum g m of FET devices with a SiO 2 gate insulator with L g = 0.76 lm was 15 mS/mm, and that with a 0.96-lm-long gate was 3.3 mS/mm. The estimated average maximum g m of FET devices with an Al 2 O 3 gate insulator with L g = 0.64 lm was 7.8 mS/mm, and that with L g = 0.97 lm was 4.5 mS/mm.…”

Section: Resultsmentioning

confidence: 99%

Fabrication of Metal–Oxide–Diamond Field-Effect Transistors with Submicron-Sized Gate Length on Boron-Doped (111) H-Terminated Surfaces Using Electron Beam Evaporated SiO2 and Al2O3

Saito

Kim

Hirama

et al. 2011

Journal of Elec Materi

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A H-terminated surface conductive layer of B-doped diamond on a (111) surface was used to fabricate a metal-oxide-semiconductor field-effect transistor (MOSFET) using an electron beam evaporated SiO 2 or Al 2 O 3 gate insulator and a Cu-metal stacked gate. When the bulk carrier concentration was approximately 10 15 /cm 3 and the B-doped diamond layer was 1.5 lm thick, the surface carrier mobility of the H-terminated surface on the (111) diamond before FET processing was 35 cm 2 /Vs and the surface carrier concentration was 1.5 9 10 13 /cm 2 . For the SiO 2 gate (0.76 lm long and 50 lm wide), the maximum measured drain current at a gate voltage of À3.0 V was À75 mA/mm and the maximum transconductance was 24 mS/mm, and for the Al 2 O 3 gate (0.64 lm long and 50 lm wide), these features were À86 mA/mm and 15 mS/ mm, respectively. These values are among the highest reported direct-current (DC) characteristics for a diamond homoepitaxial (111) MOSFET.

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Section: Resultsmentioning

confidence: 99%

Fabrication of Metal–Oxide–Diamond Field-Effect Transistors with Submicron-Sized Gate Length on Boron-Doped (111) H-Terminated Surfaces Using Electron Beam Evaporated SiO2 and Al2O3

Saito

Kim

Hirama

et al. 2011

Journal of Elec Materi

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“…It is potentially useful to various applications in electronics, such as electron emitters, Schottky diodes [1][2][3] . The diamond films obtained by chemical vapor deposition (CVD) methods exhibit three index surfaces of (100), (111) and (110).…”

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confidence: 99%

Electronic structures of the oxygenated diamond (100) surfaces

et al. 2006

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By means of first principles method on the basis of density functional theory (DFT), the equilibrium geometries and density of states (DOS) of the two oxygenated diamond (100) surfaces, bridging model and on-top model are calculated. The results indicate that there are no surface states located in the band gap of the bridging model of oxygenated diamond (100) surface, and the occupied surface states in the valence band are attributed to the non-bonded O 2p orbital, O 2p and C 2p bonding orbitals, and C 2p and H 1s bonding orbitals. By contrast, for the on-top model of oxygenated diamond (100) surface, the unoccupied surface states exist in the band gap, which originate from non-bonded C 2p and O 2p orbitals. In addition, the occupied surface states in the valence band are induced by non-bonded O 2p orbital and the C==O π bond.

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“…Several elementary devices such as the Schottky barrier diode (SBD) [4][5][6], Schottky-p-n diode [7,8], p-i-n diode [9], junction field effect transistor [10], and metal-oxidesemiconductor field effect transistor (MOSFET) [11] have been reported. Moreover, new electronic devices based on the unique properties of diamond have been achieved: the excitonic lightemitting diode (LED) [12][13][14][15], the high-voltage (10 kV) vacuum switch device [16,17], and hydrogenated-diamond field effect transistors (FETs) [18][19][20][21]. Owing to their large binding energy (80 meV [22]), excitons are very stable in diamond even at room temperature (RT), and a near band-edge deep ultraviolet (UV) light emission (at 235 nm) may be obtained due to free-exciton recombination.…”

Section: Introductionmentioning

confidence: 99%

“…On the other hand, the hydrogen-terminated diamond surface induces a negative electron affinity, and a quasi-two-dimensional hole channel below the surface [23][24][25]. These unique properties have allowed the fabrication of cold cathode emitters [16,26,27], high-voltage (10 kV) vacuum switch devices [16,17], and hydrogenated-diamond FETs based on the near-surface hole channel [18][19][20][21]. Today, diamond is mainly limited by the availability of electronic-grade wafers that are not yet large enough for developing electronic devices.…”

Section: Introductionmentioning

confidence: 99%

Reverse‐recovery of diamond p‐i‐n diodes

Traoré

Nakajima

Makino

et al. 2018

IET Power Electronics

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Diamond p-in diodes are one of the most advanced and promising diamond devices for high-power applications. The electrical characteristics of diamond p-in diodes have been extensively investigated in the static state, but their switching properties are unknown, and the recovery waveform is the main concern. This study highlights the switching properties of diamond p-in diodes used as freewheeling diodes in a clamped inductive switching circuit. The recovery waveform was measured by a wide range of conduction current, reverse blocking voltage, and switching speed. For the basic device design used (without edge termination), the p-in diode could be switched from a conducting state at 850 A/cm 2 to a blocking state at 400 V. The reverse recovery time was <150 ns. The reverse-recovery depends on the on-state current level, reverse voltage, and switching rate, illustrated the fast switching of diamond p-in diodes.

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Fabrication of diamond MISFET with micron-sized gate length on boron-doped (111) surface

Cited by 11 publications

References 23 publications

Fabrication of Metal–Oxide–Diamond Field-Effect Transistors with Submicron-Sized Gate Length on Boron-Doped (111) H-Terminated Surfaces Using Electron Beam Evaporated SiO2 and Al2O3

Fabrication of Metal–Oxide–Diamond Field-Effect Transistors with Submicron-Sized Gate Length on Boron-Doped (111) H-Terminated Surfaces Using Electron Beam Evaporated SiO2 and Al2O3

Electronic structures of the oxygenated diamond (100) surfaces

Reverse‐recovery of diamond p‐i‐n diodes

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