International audienceHigh forward current density of 103 A/cm2 (at 6 V) and a breakdown field larger than 7.7 MV/cm for diamond diodes with a pseudo-vertical architecture, are demonstrated. The power figure of merit is above 244 MW/cm2 and the relative standard deviation of the reverse current density over 83 diodes is 10% with a mean value of 10 9 A/cm2. These results are obtained with zirconium as Schottky contacts on the oxygenated (100) oriented surface of a stack comprising an optimized lightly boron doped diamond layer on a heavily boron doped one, epitaxially grown on a Ib substrate. The origin of such performances are discussed

We report an exhaustive description of electrical properties of mono‐crystalline diamond epilayers doped with boron and phosphorus impurities. Carrier density, carrier mobility, and resistivity have been calculated for boron and phosphorus doped diamond as a function doping level and a compensation for values ranging between 1014 and 1020thinmathspacecm−3 at two different temperatures of 300 and 500 K. The calculated values are graphically compared with experimental data from the literature and discussed in terms of device performances. Finally, an example of use of the graphics is given by comparing the IV characteristics of the first pn diamond junction with our calculations. Theoretical hole mobility as function of acceptor concentration and compensation at 300 and 500 K. The symbols are experimental data from references given in the text.