Microwave noise modeling of FinFETs

Crupi, Giovanni; Caddemi, Alina; Schreurs, Dominique; Wiatr, Wojciech; Mercha, A.

doi:10.1016/j.sse.2010.10.010

Cited by 33 publications

(17 citation statements)

References 31 publications

(50 reference statements)

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“…At the bias point providing the minimum of NF min , Figure represents the results as a function of frequency for the JL and IM transistors. The frequency dependence of these quantities is also in agreement with the tendency of the measurement results provided by other authors . With an increase of the frequency, NF min increases while G ass decreases, which set up an upper limit to the working frequency of the devices.…”

Section: Resultssupporting

confidence: 91%

Analysis of the RF and noise performance of junctionless MOSFETs using Monte Carlo simulation

2013

Int J Numerical Modelling

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The dynamic characteristics and high-frequency noise performance of junctionless (JL) metal-oxide-semiconductor field-effect transistors (MOSFETs) are investigated using a full-band Monte Carlo simulator. A detailed comparison with conventional inversion mode (IM) MOSFETs is presented. The results of the radio frequency performance indicate that, compared with the traditional IM MOSFET, the JL transistor exhibits lower drain current (I ds ), transconductance (g m ), and cut-off frequency (f t ) because of its lower electron velocity in the high doping channel. However, owing to a reduced output conductance (g ds ) and a larger C gs /C gd ratio (C gs is the gate-to-source capacitance; C gd is the gate-to-drain capacitance), the JL MOSFET presents an improvement in the intrinsic voltage gain (A vo ) and maximum frequency of oscillation (f max ) in comparison with the IM transistor, which makes it be a viable option for the high-voltage and power gain analog/radio frequency applications. The results of the noise characteristics show that the JL MOSFET exhibits higher minimum noise figure (NF min ) and equivalent noise resistance (R n ), indicating an inferior noise performance.

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Section: Resultssupporting

confidence: 91%

Analysis of the RF and noise performance of junctionless MOSFETs using Monte Carlo simulation

2013

Int J Numerical Modelling

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“…Furthermore, lower values for the module of Г opt and increased angle for this parameter are also obtained in the DG structure, as shown in Figure 13(b); thus it is easier to build the matching network at the transistor input for minimum noise conditions. To further clarify the frequency dependence of these quantities, Figure 14 represents the results as a function of frequency for both SG and DG structures for the bias point providing the minimum of NF min , V gs À V t = 0.2 V for the SG device and V gs À V t = 0.15 V for the DG one, both at V ds =1 V. The frequency dependence of these quantities is also in good agreement with the measurement results provided by other authors [30][31][32]. The well-know increase of NF min and decrease of G ass with frequency, which set up an upper limit to the working frequency of the devices, are clearly observed.…”

Section: Noise Resultssupporting

confidence: 85%

Monte Carlo analysis of dynamic characteristics and high‐frequency noise performances of nanoscale double‐gate MOSFETs

Mohamed

2013

Int J Numerical Modelling

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In this paper, a full-band Monte Carlo simulator is employed to study the dynamic characteristics and highfrequency noise performances of a double-gate (DG) metal-oxide-semiconductor field-effect transistor (MOSFET) with 30 nm gate length. Admittance parameters (Y parameters) are calculated to characterize the dynamic response of the device. The noise behaviors of the simulated structure are studied on the basis of the spectral densities of the instantaneous current fluctuations at the drain and gate terminals, together with their cross-correlation. Then the normalized noise parameters (P, R, and C), minimum noise figure (NF min ), and so on are employed to evaluate the noise performances. To show the outstanding radio-frequency performances of the DG MOSFET, a single-gate silicon-on-insulator MOSFET with the same gate length is also studied for comparison. The results show that the DG structure provides better dynamic characteristics and superior highfrequency noise performances, owing to its inherent short-channel effect immunity, better gate control ability, and lower channel noise.

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“…Thus, the extraction of the noise model is reduced to the determination of only the temperature associated to the intrinsic output resistance T ds , as the other resistance temperatures are selected to be equal to the ambient temperature, coherently with their physics‐based contribution to thermal noise. The reported experimental results show that, in agreement with previously published studies for GaAs and Si transistors , the 50‐Ω noise factor F 50 of the tested GaN HEMT exhibits a behavior as a function of the squared frequency that can be approximated by a first‐order fitting. This observation is of great importance because the most appropriate value of T ds can be successfully determined to enable the noise model to mimic the detected behavior of F 50 .…”

Section: Introductionsupporting

confidence: 89%

GaN HEMT noise modeling based on 50‐Ω noise factor

Crupi

Caddemi

Raffo

et al. 2015

Micro & Optical Tech Letters

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The extraction of a high-frequency ivalent circuit model plays a fundamental role for the development of any emerging transistor technology. Indeed, an equivalent circuit can provide a valuable support for microwave engineers to ensure a fast and reliable optimization of both device fabrication and circuit design. As far as gallium nitride (GaN) HEMTs are concerned, research efforts have been mostly focused on determining equivalent circuits able to reproduce their large-signal behavior. Nevertheless, an increasing amount of interest is also being devoted to noise equivalent circuits, due to the interesting GaN technology noise performance. Within this context, the purpose of the present paper is to extract and fully validate an accurate noise model for GaN HEMTs based on a simple, fast, and reliable extraction procedure. The noise model is obtained by assigning an equivalent noise temperature to each resistor of the small-signal equivalent circuit. The accuracy of the extracted noise model is confirmed by the good agreement between measured and simulated high-frequency noise parameters

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Microwave noise modeling of FinFETs

Cited by 33 publications

References 31 publications

Analysis of the RF and noise performance of junctionless MOSFETs using Monte Carlo simulation

Analysis of the RF and noise performance of junctionless MOSFETs using Monte Carlo simulation

Monte Carlo analysis of dynamic characteristics and high‐frequency noise performances of nanoscale double‐gate MOSFETs

GaN HEMT noise modeling based on 50‐Ω noise factor

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