GaN HEMT noise modeling based on 50‐Ω noise factor

Crupi, Giovanni; Caddemi, Alina; Raffo, Antonio; Salvo, Giuseppe; Nalli, Andrea; Vannini, G.

doi:10.1002/mop.28983

Cited by 26 publications

(31 citation statements)

References 40 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The N ‐parameters have been determined according to the standard source‐pull procedure, which exploits a noise figure analyzer (Agilent N8975A) to measure the noise figure for at least four different source impedances synthesized by a tuner (Maury MT‐983BU01) . This procedure is based on the fact that the four noise parameters can be used to define the noise factor F (or noise figure NF when expressed in dB) as a function of the source reflection coefficient Γ s

F = F_{min} + 4 \frac{R_{normaln}}{Z_{0}} \frac{{| Γ_{normals} - Γ_{opt} |}^{2}}{{| 1 + Γ_{opt} |}^{2} true(1 - {| Γ_{normals} |}^{2} true)}

where the reference impedance Z 0 is usually 50 Ω, F min is the minimum noise factor, Γ opt is the complex optimum source reflection coefficient, and R n is the equivalent noise resistance.…”

Section: Device Under Test and Experimental Set‐upmentioning

confidence: 99%

Microwave noise parameter modeling of a GaAs HEMT under optical illumination

Caddemi

Cardillo

Crupi

2015

Microw. Opt. Technol. Lett.

Self Cite

View full text Add to dashboard Cite

This article presents the experimental results of the modeling of noise parameters for a GaAs HEMT under light exposure. The noise model is based on the equivalent-circuit representation expanded by assigning an equivalent noise temperature to each resistor. To take into account for the significant increase of the gate current under light exposure, two resistances with the associated noise temperatures have been added at the input and feedback of the intrinsic section of the circuit. The validity of the developed technique has been confirmed by the achieved good agreement between measured and simulated microwave noise parameters with and without optical illumination. V C 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:151-154, 2016; View this article online at wileyonlinelibrary.com.

show abstract

F = F_{min} + 4 \frac{R_{normaln}}{Z_{0}} \frac{{| Γ_{normals} - Γ_{opt} |}^{2}}{{| 1 + Γ_{opt} |}^{2} true(1 - {| Γ_{normals} |}^{2} true)}

where the reference impedance Z 0 is usually 50 Ω, F min is the minimum noise factor, Γ opt is the complex optimum source reflection coefficient, and R n is the equivalent noise resistance.…”

Section: Device Under Test and Experimental Set‐upmentioning

confidence: 99%

Microwave noise parameter modeling of a GaAs HEMT under optical illumination

Caddemi

Cardillo

Crupi

2015

Microw. Opt. Technol. Lett.

Self Cite

View full text Add to dashboard Cite

show abstract

“…AlGaN/GaN monolithic microwave integrated circuit (MMIC) has entered a stage of application internationally [1][2][3][4], whose products have reached a maximum operation frequency of W-band [5]. A wideband and accurate small-signal model is the foundation of large-signal modeling in bottom-up method [6][7][8][9][10][11][12] and can also be used to build noise models [13][14][15][16][17], which makes small-signal modeling of great significance to the development and application of GaN MMIC.…”

Section: Introductionmentioning

confidence: 99%

An efficient parameter extraction method for GaN HEMT small‐signal equivalent circuit model

Wen

Wang

et al. 2015

Int J Numerical Modelling

View full text Add to dashboard Cite

This paper proposes an efficient parameter extraction algorithm for GaN high electron mobility transistors smallsignal equivalent circuit model. The algorithm combines parameter scanning and iteration methods to solve the problem of error accumulation in conventional methods and is implemented in MATLAB programming. By using the iteration method, the algorithm each time uses more accurate element values thus makes the results converge to the optimal value faster. A 20-element small-signal equivalent circuit model of GaN high electron mobility transistors is used to validate the proposed algorithm, and the results show that the calculated S-parameters agree well with the measured S-parameters within the frequency range of 0.1 to 40 GHz.

show abstract

“…Although a lot of research is in progresses in the field of theoretical and numerical DC characteristics for GaN HEMT, but still, the research on noise characteristics and modeling of the device is in the phase of limitation. Different high‐frequency noise models for GaN HEMTs are available in different literatures . But to the best of author's knowledge, high‐frequency noise model for GaN MOS‐HEMT is still not available.…”

Section: Introductionmentioning

confidence: 99%

“…Different high-frequency noise models for GaN HEMTs are available in different literatures. [12][13][14][15][16][17] But to the best of author's knowledge, high-frequency noise model for GaN MOS-HEMT is still not available. So, in this paper, the main objective of the authors is to characterize and model different high-frequency noise parameters of E-mode GaN MOS-HEMT.…”

Section: Introductionmentioning

confidence: 99%

Investigation of gate induced noise in E‐mode GaN MOS‐HEMT and its effect on noise parameters

Panda

Lenka

2018

Int J Numerical Modelling

View full text Add to dashboard Cite

In this paper, the effects of gate induced noise for a gate recessed enhancement‐mode GaN‐based metal‐oxide‐semiconductor high electron mobility transistor (MOS‐HEMT) is investigated. To analyze this, a surface potential–based compact model for gate induced noise is developed. The model is validated by comparing with TCAD device simulation results as well as with the available experimental data of GaN HEMT and MOS‐HEMT having different gate lengths and widths from the literature. With the help of the developed model, the effect of oxide thickness on different noise sources is investigated by considering all high‐frequency noise sources including the shot noise resulted from gate leakage current. The effects of gate leakage current on different technology dependent parameters such as oxide thickness and gate length are also investigated. A 2‐port noise equivalent circuit for GaN MOS‐HEMT is designed by considering all high‐frequency noise sources. The different noise parameter models are developed from the Y parameters of the 2‐port noise equivalent circuit and compared with available experimental data of GaN HEMT and MOS‐HEMT from literature. The impact of gate induced noise on all noise parameters is also investigated.

show abstract

GaN HEMT noise modeling based on 50‐Ω noise factor

Cited by 26 publications

References 40 publications

Microwave noise parameter modeling of a GaAs HEMT under optical illumination

Microwave noise parameter modeling of a GaAs HEMT under optical illumination

An efficient parameter extraction method for GaN HEMT small‐signal equivalent circuit model

Investigation of gate induced noise in E‐mode GaN MOS‐HEMT and its effect on noise parameters

Contact Info

Product

Resources

About