Microwave ECR Plasma Assisted MOCVD of Y₂O₃ Thin Films Using Y(tod)₃ Precursor and Their Characterization

Abstract

Yttrium oxide (Y2O3) thin films were deposited by microwave electron cyclotron resonance (ECR) plasma assisted metal organic chemical vapour deposition (MOCVD) process using indigenously developed metal organic precursors Yttrium 2,7,7‐trimethyl‐3,5‐octanedionates, commonly known as Y(tod)3 which were synthesized by an ultrasound method. A series of thin films were deposited by varying the oxygen flow rate from 1–9 sccm, keeping all other parameters constant. The deposited coatings were characterized by X‐ray photoelectron spectroscopy, glancing angle X‐ray diffraction and infrared spectroscopy. Thickness and roughness for the films were measured by stylus profilometry. Optical properties of the coatings were studied by the spectroscopic ellipsometry. Hardness and elastic modulus of the films were measured by nanoindentation technique. Being that microwave ECR CVD process is operating‐pressure‐sensitive, optimum oxygen activity is very essential for a fixed flow rate of precursor, in order to get a single phase cubic yttrium oxide in the films. To the best of our knowledge, this is the first effort that describes the use of Y(tod)3 precursor for deposition of Y2O3 films using plasma assisted CVD process.

Controllable phase formation and physical properties of yttrium oxide films governed by substrate heating and bias voltage

“…5(f). The first pair is located at 156.370.2 eV and 158.370.2 eV, corresponding to Y3d 5/2 and Y3d 3/2 of Y-O bond respectively; the second one at 15870.2 eV and 16070.2 eV is from the Y3d 5/2 and Y3d 3/2 of Y-OH bond respectively [31]. The analysis for Y3d is consistent with that of O1s.…”

“…They can be deconvoluted into two single peaks (Fig. 5(e)) corresponding to the O-Y [31] and O δ (physisorbed O or OH) [7,32]. All O1s peaks exhibit the same feature.…”

Study on reactive sputtering of yttrium oxide: Process and thin film properties

“…Accordingly, XPS spectra of Y3d core level in Fig. 3(b) show the Y3d3/2 (158.6 eV) and Y3d5/2 (156.6 eV), corresponding to Y-O bond [36], while the other counterpart Y3d3/2 (160.1 eV) and Y3d5/2 (158.1 eV), is in agreement with the Y-OH bond [29]. Similar variation of Y3d spectra upon sputtering can be observed.…”

“…Although there have been many reports about thin film deposition of yttrium oxide by a large number of methods, including molecular beam deposition [17,24], electron beam evaporation deposition [25], pulsed laser deposition [26,27], radio frequency sputtering [7,28], chemical vapor deposition [2,29], there are few reports systematically covering the controllable growth of yttrium oxide films by DC reactive magnetron sputtering [30]. The latter research paper still leaves an interesting gap to be investigated, especially, on understanding and controlling the growth of yttrium oxide films within the three different modes from metallic mode, transition zone to poisoned mode.…”

Thermal Atomic Layer Deposition of Yttrium Oxide Films and Their Properties in Anticorrosion and Water Repellent Coating Applications

“…A wide variety of ALD rare earth precursor complexes have been previously reported; β-diketonates [18][19][20], silylamides [21,22], cyclopentadienyls [23][24][25][26], amidinates [27,28], guanidinates [29][30][31][32][33] and pyrazolates [34], to name a few examples. β-diketonates, such as tris(2,2,6,6-tetramethyl-3,5-heptanedionate)yttrium, Y(thd) 3 [18], and tris(2,7,7-trimethyl-3,5-octanedionate)yttrium, Y(fod) 3 [20], were among the first examples to be assessed; these compounds typically exhibit undesirably high melting points (generally exceeding 150 • C). Their primary advantage is superior thermal stability, but at the cost of low vapor pressure.…”