Microtwinning and growth defects in GaAs MBE layers

Growth of low defect density GaP layers on Si substrates within the critical thickness by optimized shutter sequence and post-growth annealing

“…SFs and TDs act as non-radiative recombination centers and degrade device life time. In addition, the SFs often come along with hillocks on an epitaxial layer [11]. In addition, TDs are occasionally generated via reactions between MDs [12].…”

Formation of multiple nanoscale twin boundaries that emit intense light in indirect-gap AlGaAs epilayers

“…However, since the twin boundaries in our samples are formed irrespective of the lattice constant of the substrate, similar to the twin boundaries in III-V [20,21] and II-VI [22] epilayers, they are not formed due to misfit-induced strain. It is naturally expected that they are nucleated at the initial stage of epitaxial growth, since they extend from the interface between the epilayer and the substrate.…”

The Selectively Doped Heterostructure Transistor: Materials, Devices, and Circuits

“…The origins of these defects are segregation of Ga atoms at an impurity (residual carbon or suboxide) or defect site (dislocations) at the surface or in the epilayer [35,36], presence of Ga 2 0 in the Ga melt [37], and Ga spitting from the Ga effusion cell [38].…”