Microstructure–thermal properties of Cu/Al2O3 bilayer prepared by direct bonding

Formation ofCuAlO2at theCu/Al2O3Interface and its Influence on Interface Strength and Thermal Conductivity

“…A recent study observed no reaction phase between metallic Cu and Al 2 O 3 after direct bonding . In their study, however, the CuAlO 2 reaction phase was found, but only between Cu 2 O and Al 2 O 3 .…”

“…The thermal resistance of Cu-Al 2 O 3 interface is very low when there is no reaction phase at the interface. 30 The high thermal conductivity for the Al 2 O 3 /Cu/Al 2 O 3 laminate further confirms that the CuAlO 2 reaction phase is not a continuous phase at the interface. The CuAlO 2 does not cover the entire interface; therefore, the heat can still transfer through the clean Cu-Al 2 O 3 interface.…”

“…A recent study observed no reaction phase between metallic Cu and Al 2 O 3 after direct bonding. 30 In their study, however, the CuAlO 2 reaction phase was found, but only between Cu 2 O and Al 2 O 3 . This indicates that the formation of CuAlO 2 can be contributed to the reaction between Cu 2 O and Al 2 O 3 as shown in the following…”

Effect of ultrasonic transmission rate on microstructure and properties of the ultrasonic-assisted brazing of Cu to alumina

“…Processing and understanding of these couples can be very helpful for widening the application range of materials and devices. The common methods for joining ceramics with metals mainly include solid phase bonding, brazing and direct bonding [3][4][5]. However, they have several drawbacks, such as expensive filler, long brazing time and high vacuum environment [6,7].…”

High-adhesion Cu patterns fabricated by nanosecond laser modification and electroless copper plating

“…Common applications include highbrightness LED (HBLED), substrates for solar concentrator cells, packages for RF module and microwave devices [1][2][3]. A standard electronic substrate for these devices consists of a ceramic substrate (usually alumina) and a circuit layer (usually copper) [4,5].…”