A direct transfer method for fabricating flexible electronics without the assistance of an adhesive layer and stamp is reported in this paper. This rapid and simple method provides an approach for the application of vertically aligned carbon nanotubes (VA-CNTs) on plastic substrates. After transfer, the VA-CNTs maintained their initial orientation in the designed pattern and showed sufficient adhesion to the substrate under extreme bending conditions. The flexible device performed an emission on the transparent substrate and showed a low turn-on of 1.13 V/μm. This VA-CNT-based flexible device, which exhibits electrical resistance sensitive to bending, is also described herein.
In this study, we investigate the oxidation behavior of copper at temperatures below 300 °C and its mechanism. A methodology to slow down the oxidation rate is then proposed based on the observed mechanism. The oxides formed after oxidation at low temperatures have fine crystal sizes; the rate constants reach 2×10 -15 m 2 /s and 6×10 -14 m 2 /s at 200 °C and 300 °C, respectively. A passivation treatment at 600 °C in nitrogen produces a thin oxide layer composed of relatively large Cu 2 O crystals. The presence of such a layer slows down the oxidation rate constants by an order of magnitude. This study demonstrates that the oxidation of copper at low temperatures is controlled by the grain boundary diffusion. Increasing the crystal size in the surface oxide reduces the oxidation rate significantly.
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