Effect of Sn-doped on microstructural and optical properties of ZnO thin films deposited by sol–gel method

Tsay, Chien Yie; Cheng, Hua; Tung, Yen Ting; Tuan, Wei‐Hsing; Lin, Chung Kwei

doi:10.1016/j.tsf.2008.06.030

Cited by 213 publications

(76 citation statements)

References 24 publications

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“…(0.74 Å ). Similar trend of change in orientation from preferred to random orientation of crystallites was observed for Sn-doped ZnO (Tsay et al 2008). For 8 at.% of Al, the change of growth orientation from (002) to (101) is due to the change in diffusion rate of Zn and O at the surface during deposition, when the presence of Al is excess in the ZnO film (Liu and Lian 2007).…”

Section: Resultssupporting

confidence: 65%

Characterization and study of antibacterial activity of spray pyrolysed ZnO:Al thin films

et al. 2015

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Aluminum-doped zinc oxide (ZnO:Al) thin films were deposited onto glass substrates using spray pyrolysis technique with the substrate temperature of 400°C. X-ray diffraction analysis indicated that the films were polycrystalline with hexagonal wurtzite structure preferentially oriented along (002) direction. Surface morphology of the films obtained by scanning electron microscopy showed that the grains were of nanoscale size with porous nature for 6 at.% of Al. Atomic force microscopy observations revealed that the particles size and surface roughness of the films decreased with Al-doping. Optical measurements indicated that ZnO:Al (6 at.%) exhibited a band gap of 3.11 eV, which is lower than that of pure ZnO film, i.e. 3.42 eV. Photoluminescence analysis showed weak NBE emission at 396 nm for Al-doped films. The low resistivity, high hall mobility and carrier concentration values were obtained at a doping ratio of 6 at.% of Al. The effective incorporation of 6 at.% of Al into ZnO lattice by occupying Zn sites yielded a well-pronounced antibacterial activity against Staphylococcus aureus.

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Section: Resultssupporting

confidence: 65%

Characterization and study of antibacterial activity of spray pyrolysed ZnO:Al thin films

et al. 2015

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“…From these images, the Roughness Mean Square (RMS) value can be extracted and seems to be significantly dependent from the Al content: an undoped 7-layer sample would present an RMS of 11 nm; this value would decrease to 7 nm for the 1 at.% Al sample, whereas a 2 at.% Al sample would present an RMS value of 4 nm. A very similar behavior, from a wrinkled surface for undoped ZnO to a very smooth surface with a 2 at.% doped sample was observed by Tsay et al [43] for Sn-doped ZnO samples; very smooth samples were also observed for Al-F co-doped ZnO samples [40]. …”

Section: Microstructural Characterizationssupporting

confidence: 79%

AZO Thin Films by Sol-Gel Process for Integrated Optics

et al. 2013

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Undoped and aluminum-doped zinc oxide (AZO) thin films are prepared by the sol-gel process. Zinc acetate dihydrate, ethanol, and monoethanolamine are used as precursor, solvent, and stabilizer, respectively. In the case of AZO, aluminum nitrate nonahydrate is added to the precursor solution with an atomic percentage equal to 1 and 2 at.% Al. The multi thin layers are deposited by spin-coating onto glass substrates, and are transformed into ZnO upon annealing at 550 °C. Films display a strong preferential orientation, with high values for the Texture Coefficients (TC) of the (002) direction (TC (002) ≈ 3). The structural, morphological, and optical properties of the thin films as a function of aluminum content have been investigated using X-Ray Diffraction (XRD), Atomic Force Microscopy (AFM), and Scanning Electronic Microscopy (SEM). Waveguiding properties of the thin films have been also studied using m-lines spectroscopy. The results indicate that the films are monomodes at 632.8 nm with optical propagation optical losses estimated around 1.6 decibel per cm (dB/cm).

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“…The growing of optoelectronic applications such as solar cells, electrochromic devices or flat panels causes a demand for transparent conductive oxides (TCOs) [1][2][3][4][5]. Non-stoichiometric and doped films of oxides of cadmium, tin, zinc, indium, and their various alloys, which are deposited by various techniques, show high transmittance in the visible optical range, high reflectance in the IR region, and very high conductivity.…”

Section: Introductionmentioning

confidence: 99%

Structural and Electrical Properties of SnO₂:F Thin Films Prepared by Chemical Vapor Deposition Method

Najafi

Rozati

2017

Acta Phys. Pol. A

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Fluorine doped tin oxide (FTO) thin films were deposited onto glass substrate at different substrate temperatures by a simple and inexpensive method of air pressure chemical vapor deposition. The substrate temperature was kept constant at about 500• C as the optimum temperature, and air was used as both a carrier gas and the oxidizing agent. A very simple method of characterization were carried on to investigate the electrical and structural properties of the prepared thin films. The electrical parameters variations showed that these parameters vary with substrate temperature ranging from an insulator thin film to a highly conductive layer. X-ray diffraction also revealed the structure to be polycrystalline at higher temperatures compared to amorphous structure for lower temperatures.

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Effect of Sn-doped on microstructural and optical properties of ZnO thin films deposited by sol–gel method

Cited by 213 publications

References 24 publications

Characterization and study of antibacterial activity of spray pyrolysed ZnO:Al thin films

Characterization and study of antibacterial activity of spray pyrolysed ZnO:Al thin films

AZO Thin Films by Sol-Gel Process for Integrated Optics

Structural and Electrical Properties of SnO₂:F Thin Films Prepared by Chemical Vapor Deposition Method

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Effect of Sn-doped on microstructural and optical properties of ZnO thin films deposited by sol–gel method

Cited by 213 publications

References 24 publications

Characterization and study of antibacterial activity of spray pyrolysed ZnO:Al thin films

Characterization and study of antibacterial activity of spray pyrolysed ZnO:Al thin films

AZO Thin Films by Sol-Gel Process for Integrated Optics

Structural and Electrical Properties of SnO2:F Thin Films Prepared by Chemical Vapor Deposition Method

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Structural and Electrical Properties of SnO₂:F Thin Films Prepared by Chemical Vapor Deposition Method