Microstructure of ZrO2–CeO2 hetero-multi-layer films grown on YSZ substrate

Wang, C.M.; Azad, Samina; Shutthanandan, V.; McCready, David E.; Peden, Charles H. F.; Saraf, Laxmikant V.; Thevuthasan, S.

doi:10.1016/j.actamat.2005.01.003

Cited by 28 publications

(24 citation statements)

References 44 publications

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“…It was reported by electron energy loss spectroscopy that Ce in the pure CeO 2 layer adapts a valence of 4, and the pure CeO 2 layer possesses a cubic fluorite structure. High temperature phase of ZrO 2 layers can be stabilized by forming nanometer scale thickness of each layer and the constraints imposed by the alternately laminated cubic CeO 2 layers [8]. In the present Keywords: oxides; thin films; multilayers; pulsed laser deposition; thermal expansion; high temperature x-ray diffraction work, the thermal expansion beviour of ceria/ zirconia multilayers is investigated using high temperature x-ray diffraction.…”

Section: Introductionmentioning

confidence: 98%

“…Since the surface energy of the tetragonal phase is lower than the monoclinic phase, reduction of crystallite size < 6 nm could result in stabilising the tetragonal phase at room temperature [7]. Pure CeO 2 and ZrO 2 multi-layer films have been grown by oxygen plasma assisted molecular beam epitaxy [8]. It was reported by electron energy loss spectroscopy that Ce in the pure CeO 2 layer adapts a valence of 4, and the pure CeO 2 layer possesses a cubic fluorite structure.…”

Section: Introductionmentioning

confidence: 99%

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Thermal stability of CeO2/ZrO2 multilayer thin films prepared by pulsed laser deposition

Balakrishnan

Kuppusami

Murugesan

et al. 2011

Trans Indian Inst Met

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Multilayers of CeO 2 /ZrO 2 thin films were deposited on Si (100) substrates using pulsed laser deposition at an optimized oxygen partial pressure of 3x10 -2 mbar and at room temperature. The CeO 2 layer thickness was 10 nm, while the ZrO 2 layer thickness was varied as 10, 20 and 30 nm. CeO 2 and ZrO 2 layers were deposited alternately to obtain 25 bilayers. High temperature x-ray diffraction (HTXRD) results showed that the multilayer films had cubic ceria and tetragonal ZrO 2. Thermal expansion coefficients were calculated for CeO 2 and t-ZrO 2 and found to increase with the decrease of ZrO 2 layer thickness. The cross sectional transmission electron microscopy (XTEM) of CeO 2 /ZrO 2 multilayer also indicated that ceria was found to be in cubic phase while zirconia contained predominantly tetragonal phase along with cubic phase in thermally annealed specimen.

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Section: Introductionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

Thermal stability of CeO2/ZrO2 multilayer thin films prepared by pulsed laser deposition

Balakrishnan

Kuppusami

Murugesan

et al. 2011

Trans Indian Inst Met

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“…Physical Vapour Deposition (PVD) techniques generally do not involve temperatures higher than 700-800 • C for GDC layers production, and when compared to standard ceramic processes, they allow obtaining much smaller layer thicknesses with higher density. Recently, several PVD techniques (e.g., oxygen plasma assisted molecular beam epitaxy [7], Pulsed Laser Deposition (PLD) [8,9], and electron beam evaporation [10]) have been investigated in view of their possible use for the GDC buffer layers production process in the industrial fabrication of IT-SOFC. All these PVD techniques generally give their best results when dealing with small area samples, while approaching industrial processes, the production of SOFC involves large area substrates.…”

Section: Introductionmentioning

confidence: 99%

Structural and Electrical Characterization of Sputter-Deposited Gd0.1Ce0.9O2−δ Thin Buffer Layers at the Y-Stabilized Zirconia Electrolyte Interface for IT-Solid Oxide Cells

et al. 2018

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The use of a doped Ceria buffer layer and Physical Vapour Deposition (PVD) techniques for Solid Oxide Fuel Cells (SOFC) fabrication can limit the former, the formation of electrical insulating lanthanum, and strontium zirconates at the cathode/electrolyte interface, whereas the latter allows a better control of the materials interfaces. These effects allow for operation at intermediate temperature ranges. In this work, we study the structural and electrical properties of Gadolinium Doped Ceria (GDC) barrier layer deposited via the room temperature RF Sputtering technique on anode supported electrolytes and then annealed at high temperature. The crystal structure and the surface morphology of the GDC barrier layers have been analyzed and optimized varying the temperature ramp of the post-growth annealing procedure. The electrical behavior of the obtained samples has been investigated by Electrochemical Impedance Spectroscopy and compared to that of standard SOFC with screen-printed GDC barrier layers, the former showing a maximum high frequency and low frequency resistances reduction of about 50% and 46%, respectively, with respect to the latter at an operating temperature of 650 • C. The results clearly show an important improvement of SOFC performances when using sputter deposited GDC layers, linking the electrical properties to the structural and stoichiometric ones.

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“…The coated conductor technology applied in this work uses second-generation tape with textured layers of YBa 2 Cu 3 O 7Ày (YBCO) epitaxially grown on crystalline buffer layers such as La 2 Zr 2 O 7 (LZO), CeO 2 ; Y 2 O 3 À ZrO 2 (YSZ), Y 2 O 3 or MgO supported by biaxially textured substrates [1][2][3]. The coated conductor approach solves two intrinsic problems of HTSs, which initially hampered their use in electric power applications: the brittle characteristics due to their ceramic nature and the need for well-aligned crystal grains to mitigate the weaklink effect prevalent in YBCO.…”

Section: Introductionmentioning

confidence: 99%

Transmission electron microscopy analysis of a coated conductor produced by chemical deposition methods

Cloet

Thersleff

Stadel³

et al. 2010

Acta Materialia

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Microstructure of ZrO2–CeO2 hetero-multi-layer films grown on YSZ substrate

Cited by 28 publications

References 44 publications

Thermal stability of CeO2/ZrO2 multilayer thin films prepared by pulsed laser deposition

Thermal stability of CeO2/ZrO2 multilayer thin films prepared by pulsed laser deposition

Structural and Electrical Characterization of Sputter-Deposited Gd0.1Ce0.9O2−δ Thin Buffer Layers at the Y-Stabilized Zirconia Electrolyte Interface for IT-Solid Oxide Cells

Transmission electron microscopy analysis of a coated conductor produced by chemical deposition methods

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