Microstructure effects on quantum efficiency in PtSi/p-Si(100) Schottky barrier detector

Coulomb blockade in PtSi/porous Si Schottky barrier as a two‐dimensional multi‐tunnelling junction

“…In regular PtSi Schottky junctions, there is a band bending between Pt and Si that formed a barrier with 0.25 eV height [1,2] and when PtSi thickness decreases, Schottky barrier height changes from its bulk value [3]. From the past two decades, these junctions have been studied extensively and it is in common usage for 3-5 µm detection spectral range at 77 K [4][5][6][7][8]. Moreover, some attempts have been applied to achieve room temperature operability of PtSi IR detection and improved its range up to 7 µm, using doping spike and porous silicon fix [9][10][11][12][13].…”

Reducing the effective barrier height of a PtSi Schottky diode by a p+doping spike using pulsed laser doping

“…Since the concept of silicide Schottky-barrier detector focal plane arrays (FPAs) was proposed by Shepherd and Yang in 1973 [1], the silicide/Si FPA has become one of the most mature technologies for large-area, high-density FPAs for many short-wavelength infrared (SWIR, 1-3 µm) and middlewavelength infrared (MWIR, 3-5 µm) applications. This is due primarily to its process compatibility with silicon very large scale integration (VLSI) [2][3][4]. PtSi/Si FPAs are used for imaging in the MWIR region.…”